Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDI9409-F085
| Producent | |
| Nr części prod. | FDI9409-F085 |
| Nr LCSC | C3278207 |
| Opak. | I2PAK(TO-262) |
| Numer Klienta | |
| Klucz. cechy | N-channel, Current: 80A, Voltage: 40V |
| Karta Katalogowa | onsemi FDI9409-F085 |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 788pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 94W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.98nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 788pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 94W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.98nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
RM50N60DF utilizes advanced trench technology and design to deliver excellent drain-source on-resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- Typical R<sub>DS(on)</sub> = 2.9 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 80 A
- Typical Q<sub>g(tot)</sub> = 43 nC at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 80 A
- Single-pulse avalanche rated
- RoHS compliant
- AEC Q101 qualified
Zastosowania
Tłumaczenie AI
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Integrated starter-generator
- 12V system main switch
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.1712 | $ 1.17 |
| 200+ | $ 0.4537 | $ 90.74 |
| 500+ | $ 0.4383 | $ 219.15 |
| 1,000+ | $ 0.4305 | $ 430.50 |
Standardowa Obudowa50/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 788pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 94W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.98nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 788pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 94W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.98nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
RM50N60DF utilizes advanced trench technology and design to deliver excellent drain-source on-resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- Typical R<sub>DS(on)</sub> = 2.9 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 80 A
- Typical Q<sub>g(tot)</sub> = 43 nC at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 80 A
- Single-pulse avalanche rated
- RoHS compliant
- AEC Q101 qualified
Zastosowania
Tłumaczenie AI
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Integrated starter-generator
- 12V system main switch
C3278207 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| FDI045N10A-F102 | onsemi | TO-262-3 | 66 | $ 5.5189 | ||
| IPI80N04S4-03 | Infineon | TO-262-3 | 0 | $ 0.5819 | ||
| AUIRFSL8403 | Infineon | TO-262-3 | 0 | $ 0.7656 | ||
| IPI80N04S4-04 | Infineon | TO-262-3 | 0 | $ 1.5651 | ||
| IPI80N06S2-08 | Infineon | TO-262-3 | 0 | $ 3.7183 | ||
| AUIRFSL3206 | Infineon | TO-262 | 0 | $ 1.9211 | ||
| IRFSL3607PBF | Infineon | TO-262-3 | 0 | $ 2.1884 | ||
| AUIRFSL4010-313TRL | Infineon | TO-262-3 | 0 | $ 2.1972 | ||
| AUIRFSL4010 | Infineon | TO-262 | 0 | $ 4.2739 | ||
| FDI045N10A | onsemi | I2PAK(TO-262) | 0 | $ 2.2204 |