Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NTB25P06T4
| Hersteller | |
| Herst.-Teilenr. | NTB25P06T4 |
| LCSC-Nr. | C3277453 |
| Verp. | D2PAK |
| Kundennummer | |
| Hauptmerkm. | P-Channel MOSFET, Current: -27.5A, Breakdown Voltage: -60V |
| Datenblatt | onsemi NTB25P06T4 |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 82mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.68nF | |
| Gate Charge(Qg) | 88nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 82mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.68nF | |
| Gate Charge(Qg) | 88nC@10V | |
| Type | P-Channel |
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Beschreibung
KI-Übersetzung
Designed for low-voltage, high-speed switching applications, capable of withstanding high energy in avalanche and commutation modes.
Merkmale
KI-Übersetzung
- AEC Q101 Certified - NVB25P06
- Lead-free and RoHS compliant
Anwendungen
KI-Übersetzung
- PWM motor control
- Power supply
- Converter
- Bridge circuit
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7407 | $ 0.74 |
| 200+ | $ 0.287 | $ 57.40 |
| 500+ | $ 0.2762 | $ 138.10 |
| 800+ | $ 0.2716 | $ 217.28 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 82mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.68nF | |
| Gate Charge(Qg) | 88nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 82mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.68nF | |
| Gate Charge(Qg) | 88nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Designed for low-voltage, high-speed switching applications, capable of withstanding high energy in avalanche and commutation modes.
Merkmale
KI-Übersetzung
- AEC Q101 Certified - NVB25P06
- Lead-free and RoHS compliant
Anwendungen
KI-Übersetzung
- PWM motor control
- Power supply
- Converter
- Bridge circuit
C3277453 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NTB25P06T4G | onsemi | D2PAK | 665 | $ 1.6724 | ||
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| TPM15030PHW3 | TECH PUBLIC | TO-263 | 199 | $1.9125 $2.0131 | ||
| NTB25P06T4G-JSM | JSMSEMI | TO-263-2L | 472 | $0.5480 $0.5768 | ||
| SPB18P06PGATMA1-JSM | JSMSEMI | TO-263-2L | 252 | $0.6577 $0.6923 | ||
| IXTA32P05T-TRL-JSM | JSMSEMI | TO-263-2L | 77 | $0.6698 $0.705 | ||
| RF1S30P06SM9A | TI | TO-263AB | 0 | $ 2.2867 | ||
| NTB5605PT4G-JSM | JSMSEMI | TO-263-2L | 0 | $0.4665 $0.491 | ||
| HYG350P13NA1B | HUAYI | TO-263-2 | 0 | $ 1.173 |