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MICROCHIP 2N5666S
| Hersteller | |
| Herst.-Teilenr. | 2N5666S |
| LCSC-Nr. | C3201251 |
| Verp. | TO-39(TO-205AD) |
| Kundennummer | |
| Hauptmerkm. | 200V 40 5A 1 NPN NPN TO-39(TO-205AD) Single Bipolar Transistors |
| Datenblatt | MICROCHIP 2N5666S |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | TO-39(TO-205AD) | |
| Current - Collector Cutoff | 200nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 200V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 1.2W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | TO-39(TO-205AD) | |
| Current - Collector Cutoff | 200nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 200V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 1.2W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 50.861 | $ 50.86 |
| 200+ | $ 19.6837 | $ 3936.74 |
| 500+ | $ 18.9909 | $ 9495.45 |
| 1,000+ | $ 18.65 | $ 18650.00 |
Standardgehäuse1/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | TO-39(TO-205AD) | |
| Current - Collector Cutoff | 200nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 200V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 1.2W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | TO-39(TO-205AD) | |
| Current - Collector Cutoff | 200nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 200V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 1.2W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |