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EDA-ModelleEasyEDA
NXP BC52-10PAS115
| Hersteller | |
| Herst.-Teilenr. | BC52-10PAS115 |
| LCSC-Nr. | C3196046 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 80V 1A PNP Single Bipolar Transistors |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | NXP | |
| Verp. | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 145MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 1.65W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | NXP | |
| Verp. | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 145MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 1.65W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.6432 | $ 2.64 |
| 200+ | $ 1.023 | $ 204.60 |
| 500+ | $ 0.9876 | $ 493.80 |
| 1,000+ | $ 0.969 | $ 969.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | NXP | |
| Verp. | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 145MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 1.65W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | NXP | |
| Verp. | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 145MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 1.65W | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
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C3196046 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |