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EDA-ModelleEasyEDA
RENESAS RJH60F6BDPQ-A0#T0
| Hersteller | |
| Herst.-Teilenr. | RJH60F6BDPQ-A0#T0 |
| LCSC-Nr. | C3193704 |
| Verp. | TO-247A |
| Kundennummer | |
| Hauptmerkm. | 297.6W 85A 600V TO-247A Single IGBTs RoHS |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | RENESAS | |
| Verp. | TO-247A | |
| Td(off) | 131ns | |
| Pd - Power Dissipation | 297.6W | |
| Td(on) | 58ns | |
| Current - Collector(Ic) | 85A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,45A | |
| Reverse Recovery Time(trr) | 25ns |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | RENESAS | |
| Verp. | TO-247A | |
| Td(off) | 131ns | |
| Pd - Power Dissipation | 297.6W | |
| Td(on) | 58ns |
| Typ | Beschreibung | |
|---|---|---|
| Current - Collector(Ic) | 85A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,45A | |
| Reverse Recovery Time(trr) | 25ns |
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Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 14.2417 | $ 14.24 |
| 200+ | $ 5.5115 | $ 1102.30 |
| 500+ | $ 5.3187 | $ 2659.35 |
| 1,000+ | $ 5.223 | $ 5223.00 |
Standardgehäuse25/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | RENESAS | |
| Verp. | TO-247A | |
| Td(off) | 131ns | |
| Pd - Power Dissipation | 297.6W | |
| Td(on) | 58ns | |
| Current - Collector(Ic) | 85A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,45A | |
| Reverse Recovery Time(trr) | 25ns |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | RENESAS | |
| Verp. | TO-247A | |
| Td(off) | 131ns | |
| Pd - Power Dissipation | 297.6W | |
| Td(on) | 58ns |
| Typ | Beschreibung | |
|---|---|---|
| Current - Collector(Ic) | 85A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,45A | |
| Reverse Recovery Time(trr) | 25ns |
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C3193704 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| RBN75H65T1FPQ-A0#CB0 | RENESAS | TO-247A | 0 | $ 11.0169 | ||
| RBN50H65T1FPQ-A0#CB0 | RENESAS | TO-247A | 0 | $ 7.8164 |