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EDA-ModelleEasyEDA
Infineon BGA777L7E6327
| Hersteller | |
| Herst.-Teilenr. | BGA777L7E6327 |
| LCSC-Nr. | C3191822 |
| Verp. | XFDFN-6-EP |
| Kundennummer | |
| Hauptmerkm. | 2.6V~3V 17dB 2.3GHz~2.7GHz 1.2dB 4.2mA XFDFN-6-EP RF Amplifiers |
| Datenblatt | Infineon BGA777L7E6327 |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | RF and Wireless/RF Amplifiers | |
| Hersteller | Infineon | |
| Verp. | XFDFN-6-EP | |
| Operating Temperature | -30℃~+85℃ | |
| Input Return Loss | - | |
| Voltage - Supply | 2.6V~3V | |
| Gain | 17dB | |
| Frequency Range | 2.3GHz~2.7GHz | |
| Output Return Loss | - | |
| Noise Figure | 1.2dB | |
| Features | Variable gain control;Low-power mode;Electrostatic protection | |
| IP3 | - | |
| P1dB | - | |
| Current - Supply | 4.2mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | RF and Wireless/RF Amplifiers | |
| Hersteller | Infineon | |
| Verp. | XFDFN-6-EP | |
| Operating Temperature | -30℃~+85℃ | |
| Input Return Loss | - | |
| Voltage - Supply | 2.6V~3V | |
| Gain | 17dB |
| Typ | Beschreibung | |
|---|---|---|
| Frequency Range | 2.3GHz~2.7GHz | |
| Output Return Loss | - | |
| Noise Figure | 1.2dB | |
| Features | Variable gain control;Low-power mode;Electrostatic protection | |
| IP3 | - | |
| P1dB | - | |
| Current - Supply | 4.2mA |
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Beschreibung
KI-Übersetzung
The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip.
Merkmale
KI-Übersetzung
- Gain: 16 / -7 dB in high / low gain mode
- Noise figure: 1.2 dB in high gain mode
- Supply current: 4.2 / 0.5 mA in high / low gain mode
- Standby mode (<2 μA typ.)
- Inputs pre-matched to 50 Ω
- 2 kV HBM ESD protection
- Low external component count
- Small leadless TSLP-7-1 package (2.0×1.3×0.39 mm)
- Pb-free (RoHS compliant) package
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0045 | $ 1.00 |
| 200+ | $ 0.3889 | $ 77.78 |
| 500+ | $ 0.375 | $ 187.50 |
| 1,000+ | $ 0.3688 | $ 368.80 |
Standardgehäuse7500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | RF and Wireless/RF Amplifiers | |
| Hersteller | Infineon | |
| Verp. | XFDFN-6-EP | |
| Operating Temperature | -30℃~+85℃ | |
| Input Return Loss | - | |
| Voltage - Supply | 2.6V~3V | |
| Gain | 17dB | |
| Frequency Range | 2.3GHz~2.7GHz | |
| Output Return Loss | - | |
| Noise Figure | 1.2dB | |
| Features | Variable gain control;Low-power mode;Electrostatic protection | |
| IP3 | - | |
| P1dB | - | |
| Current - Supply | 4.2mA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | RF and Wireless/RF Amplifiers | |
| Hersteller | Infineon | |
| Verp. | XFDFN-6-EP | |
| Operating Temperature | -30℃~+85℃ | |
| Input Return Loss | - | |
| Voltage - Supply | 2.6V~3V | |
| Gain | 17dB |
| Typ | Beschreibung | |
|---|---|---|
| Frequency Range | 2.3GHz~2.7GHz | |
| Output Return Loss | - | |
| Noise Figure | 1.2dB | |
| Features | Variable gain control;Low-power mode;Electrostatic protection | |
| IP3 | - | |
| P1dB | - | |
| Current - Supply | 4.2mA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip.
Merkmale
KI-Übersetzung
- Gain: 16 / -7 dB in high / low gain mode
- Noise figure: 1.2 dB in high gain mode
- Supply current: 4.2 / 0.5 mA in high / low gain mode
- Standby mode (<2 μA typ.)
- Inputs pre-matched to 50 Ω
- 2 kV HBM ESD protection
- Low external component count
- Small leadless TSLP-7-1 package (2.0×1.3×0.39 mm)
- Pb-free (RoHS compliant) package
C3191822 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542339000 |
| USHTS | 8542330001 |
| TARIC | 8542339000 |
| CAHTS | 8542330000 |
| BRHTS | 85423390 |
| INHTS | 85423300 |
| MXHTS | 8542.33.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542339000 |
| USHTS | 8542330001 |
| TARIC | 8542339000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423390 |
| INHTS | 85423300 |
| MXHTS | 8542.33.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| BGA711L7E6327 | Infineon | XFDFN-6-EP | 0 | $ 1.0045 |