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EDA-ModelleEasyEDA
Infineon IKW03N120H2
| Hersteller | |
| Herst.-Teilenr. | IKW03N120H2 |
| LCSC-Nr. | C3191708 |
| Verp. | TO-247-3-1 |
| Kundennummer | |
| Hauptmerkm. | 62.5W 9.6A 1.2kV TO-247-3-1 Single IGBTs RoHS |
| Datenblatt | Infineon IKW03N120H2 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3-1 | |
| Td(off) | 281ns | |
| Pd - Power Dissipation | 62.5W | |
| Td(on) | 9.2ns | |
| Current - Collector(Ic) | 9.6A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 7pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,3A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 42ns | |
| Switching Energy(Eoff) | 150uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | 24pF | |
| Gate Charge(Qg) | 22nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3-1 | |
| Td(off) | 281ns | |
| Pd - Power Dissipation | 62.5W | |
| Td(on) | 9.2ns | |
| Current - Collector(Ic) | 9.6A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 7pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,3A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 42ns | |
| Switching Energy(Eoff) | 150uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | 24pF | |
| Gate Charge(Qg) | 22nC |
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Beschreibung
KI-Übersetzung
High-Speed 2 technology with soft, fast-recovery anti-parallel emitter-controlled HE diode. Designed for switch-mode power supplies, lamp ballasts, and zero-voltage-switching converters. Second-generation high-speed technology for 1200V applications features: reduced losses in resonant circuits, temperature-stable performance, parallel switching capability, tight parameter distribution, turn-off energy (Eoff) optimized at collector current (Ic) = 3A. JEDEC2 compliant for target applications. Lead-free pin plating, RoHS compliant.
Merkmale
KI-Übersetzung
- Reduced losses in resonant circuits
- Temperature stability
- Parallel switching capability
- Tight parameter distribution
- Turn-off energy (Eoff) optimized for collector current (Ic) = 3A
Anwendungen
KI-Übersetzung
- Switching power supplies
- Lamp ballasts
- Zero-voltage switching converters
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.6432 | $ 2.64 |
| 200+ | $ 1.023 | $ 204.60 |
| 500+ | $ 0.9876 | $ 493.80 |
| 1,000+ | $ 0.969 | $ 969.00 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3-1 | |
| Td(off) | 281ns | |
| Pd - Power Dissipation | 62.5W | |
| Td(on) | 9.2ns | |
| Current - Collector(Ic) | 9.6A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 7pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,3A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 42ns | |
| Switching Energy(Eoff) | 150uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | 24pF | |
| Gate Charge(Qg) | 22nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3-1 | |
| Td(off) | 281ns | |
| Pd - Power Dissipation | 62.5W | |
| Td(on) | 9.2ns | |
| Current - Collector(Ic) | 9.6A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 7pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.8V@15V,3A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 42ns | |
| Switching Energy(Eoff) | 150uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | 24pF | |
| Gate Charge(Qg) | 22nC |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
High-Speed 2 technology with soft, fast-recovery anti-parallel emitter-controlled HE diode. Designed for switch-mode power supplies, lamp ballasts, and zero-voltage-switching converters. Second-generation high-speed technology for 1200V applications features: reduced losses in resonant circuits, temperature-stable performance, parallel switching capability, tight parameter distribution, turn-off energy (Eoff) optimized at collector current (Ic) = 3A. JEDEC2 compliant for target applications. Lead-free pin plating, RoHS compliant.
Merkmale
KI-Übersetzung
- Reduced losses in resonant circuits
- Temperature stability
- Parallel switching capability
- Tight parameter distribution
- Turn-off energy (Eoff) optimized for collector current (Ic) = 3A
Anwendungen
KI-Übersetzung
- Switching power supplies
- Lamp ballasts
- Zero-voltage switching converters
C3191708 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IHW15N120E1 | Infineon | TO-247-3 | 92 | $ 4.3459 | ||
| DGW10N120CTL | YANGJIE | TO-247 | 10 | $ 1.9366 | ||
| IKW25N120T2 | Infineon | TO-247-3 | 3,992 | $ 3.0093 | ||
| IHW30N160R5 | Infineon | TO-247-3 | 2,576 | $ 4.3408 | ||
| IKW15N120H3FKSA1 | Infineon | TO-247-3 | 4 | $ 6.9428 | ||
| MSG15T120HLC0 | MASPOWER | TO-247 | 22 | $ 2.268 | ||
| IGW25N120H3FKSA1 | Infineon | TO-247-3-1 | 1 | $ 6.7699 | ||
| IKW03N120H | Infineon | TO-247-3 | 0 | $ 3.5149 | ||
| IXGH6N170 | Littelfuse/IXYS | TO-247AD | 0 | $ 12.831 | ||
| IXGH12N120A3 | Littelfuse/IXYS | TO-247AD | 0 | $ 6.0376 |