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Modelli EDAEasyEDA
Infineon IKW50N65SS5XKSA1
| Produttore | |
| Cod. Prod. | IKW50N65SS5XKSA1 |
| Cod. LCSC | C3191664 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 274W 80A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Scheda Tecnica | Infineon IKW50N65SS5XKSA1 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Td(off) | 140ns | |
| Pd - Power Dissipation | 274W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V;1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 550uJ | |
| Turn-On Energy (Eon) | 320uJ | |
| Input Capacitance(Cies) | 2.66nF | |
| Output Capacitance(Coes) | 530pF | |
| Gate Charge(Qg) | 110nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Td(off) | 140ns | |
| Pd - Power Dissipation | 274W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V;1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 550uJ | |
| Turn-On Energy (Eon) | 320uJ | |
| Input Capacitance(Cies) | 2.66nF | |
| Output Capacitance(Coes) | 530pF | |
| Gate Charge(Qg) | 110nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- VCE = 650 V
- IC = 50 A
- Combines TRENCHSTOP 5 and CoolSiC technology for ultra-low switching losses
- Ultra-low conduction losses
- Best-in-class efficiency in hard-switching topologies
- Drop-in replacement for pure silicon devices
- Maximum junction temperature Tvjmax = 175 °C
- Qualified for target applications per JEDEC standards
- Lead-free plating; RoHS compliant
Applicazioni
Traduzione AI
- Industrial switching power supplies
- Industrial uninterruptible power supplies
- Solar string inverters
- Energy storage systems
- Chargers
Disponibile: 3
3 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 11.035 | $ 11.04 |
| 10+ | $ 10.6788 | $ 106.79 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Td(off) | 140ns | |
| Pd - Power Dissipation | 274W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V;1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 550uJ | |
| Turn-On Energy (Eon) | 320uJ | |
| Input Capacitance(Cies) | 2.66nF | |
| Output Capacitance(Coes) | 530pF | |
| Gate Charge(Qg) | 110nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Td(off) | 140ns | |
| Pd - Power Dissipation | 274W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V;1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 550uJ | |
| Turn-On Energy (Eon) | 320uJ | |
| Input Capacitance(Cies) | 2.66nF | |
| Output Capacitance(Coes) | 530pF | |
| Gate Charge(Qg) | 110nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- VCE = 650 V
- IC = 50 A
- Combines TRENCHSTOP 5 and CoolSiC technology for ultra-low switching losses
- Ultra-low conduction losses
- Best-in-class efficiency in hard-switching topologies
- Drop-in replacement for pure silicon devices
- Maximum junction temperature Tvjmax = 175 °C
- Qualified for target applications per JEDEC standards
- Lead-free plating; RoHS compliant
Applicazioni
Traduzione AI
- Industrial switching power supplies
- Industrial uninterruptible power supplies
- Solar string inverters
- Energy storage systems
- Chargers
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IKW50N65RH5XKSA1 | Infineon | TO-247-3 | 18 | $ 10.0077 | ||
| FGHL50T65MQD | onsemi | TO-247-3L | 3 | $ 4.7846 | ||
| MLG50T65FDK | Minos | TO-247 | 500 | $ 2.0018 | ||
| AFGHL50T65SQD | onsemi | TO-247-3L | 35 | $ 5.9949 | ||
| FGHL50T65MQDT | onsemi | TO-247-3L | 248 | $0.8526 $4.4872 | ||
| MSG50T65HHC0 | MASPOWER | TO-247 | 1 | $1.6483 $1.735 | ||
| RGTH00TS65GC13 | ROHM | TO-247 | 0 | $ 1.1236 | ||
| RGTH00TS65DGC11 | ROHM | TO-247N | 0 | $ 2.5178 | ||
| RGTH00TS65GC11 | ROHM | TO-247N | 0 | $ 2.1366 | ||
| AFGHL50T65SQ | onsemi | TO-247-3L | 0 | $ 5.5221 |