Infineon DD1200S33K2C
| Producent | |
| Nr części prod. | DD1200S33K2C |
| Nr LCSC | C3171028 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | Single IGBTs |
| Karta Katalogowa | Infineon DD1200S33K2C |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | - | |
| Pd - Power Dissipation | - | |
| Td(off) | - | |
| Td(on) | - | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | - | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | - | |
| Pd - Power Dissipation | - | |
| Td(off) | - | |
| Td(on) | - | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | - | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
DC continuous current: chip-related value; terminal value per branch: <1000A DC forward current: chip-related value; terminal value per arm: <1000A Dynamic data valid when used with FZ1200R33KF2C module.
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 2.6432 | $ 2.64 |
| 200+ | $ 1.023 | $ 204.60 |
| 500+ | $ 0.9876 | $ 493.80 |
| 1,000+ | $ 0.969 | $ 969.00 |
Standardowa Obudowa2/Full Bag | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | - | |
| Pd - Power Dissipation | - | |
| Td(off) | - | |
| Td(on) | - | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | - | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | - | |
| Pd - Power Dissipation | - | |
| Td(off) | - | |
| Td(on) | - | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | - | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
DC continuous current: chip-related value; terminal value per branch: <1000A DC forward current: chip-related value; terminal value per arm: <1000A Dynamic data valid when used with FZ1200R33KF2C module.
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

