Abbildung ähnlich
EDA-ModelleEasyEDA
ST STB80N4F6AG
| Hersteller | |
| Herst.-Teilenr. | STB80N4F6AG |
| LCSC-Nr. | C2970681 |
| Verp. | D2PAK |
| Kundennummer | |
| Hauptmerkm. | Automotive-grade N-Channel 40 V, 80 A, 5.5 mΩ typ. On-Resistance |
| Datenblatt | ST STB80N4F6AG |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 335pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 335pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using STripFET™ F6 technology featuring a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-state resistance RDS(on) across all package types.
Merkmale
KI-Übersetzung
- Designed for automotive applications, AEC-Q101 qualified
- Ultra-low on-resistance
- Ultra-low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Anwendungen
KI-Übersetzung
- Switching applications
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.4224 | $ 2.42 |
| 200+ | $ 0.9387 | $ 187.74 |
| 500+ | $ 0.9055 | $ 452.75 |
| 1,000+ | $ 0.8881 | $ 888.10 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 335pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 335pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 80A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using STripFET™ F6 technology featuring a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-state resistance RDS(on) across all package types.
Merkmale
KI-Übersetzung
- Designed for automotive applications, AEC-Q101 qualified
- Ultra-low on-resistance
- Ultra-low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Anwendungen
KI-Übersetzung
- Switching applications
C2970681 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FH6880A | XIN FEI HONG | TO-263 | 458 | $ 0.3354 | ||
| IRFS3307ZTRLPBF | Infineon | D2PAK | 8 | $1.6917 $4.0277 | ||
| APG060N85D | ALLPOWER | TO-263 | 0 | $ 1.4867 | ||
| AUIRFS4410ZTRL | Infineon | D2PAK | 0 | $ 4.1967 | ||
| STB100N6F7 | ST | TO-263-2 | 0 | $ 2.8756 | ||
| NCE01H10D | NCE | TO-263-2 | 0 | $ 0.7728 | ||
| AGM15T13H | AGMSEMI | TO-263 | 0 | $ 1.4736 | ||
| IRFS3307ZTRRPBF | Infineon | D2PAK | 0 | $ 2.1723 | ||
| STB130N6F7 | ST | D2PAK | 0 | $ 2.6319 | ||
| NCEP055N10D | NCE | TO-263 | 0 | $ 0.8592 |