Infineon/CYPRESS CY14B104NA-ZS45XE

Cypress CY14B104L/CY14B104N is a fast SRAM with a nonvolatile element in each memory cell. The memory is organized as 512K × 8-bit bytes or 256K × 16-bit words. The embedded nonvolatile element utilizes QuantumTrap technology to deliver reliable nonvolatile storage. The SRAM provides unlimited read/write cycles, while independent nonvolatile data is stored in highly reliable QuantumTrap cells. On power loss, data is automatically transferred from SRAM to the nonvolatile elements (STORE operation). On power-up, data is restored from nonvolatile memory to SRAM (RECALL operation). STORE and RECALL operations can also be performed under software control.

• Access times of 20 ns, 25 ns, and 45 ns
• Internal organization of 512K×8 (CY14B104L) or 256K×16 (CY14B104N)
• Automatic data save on power-down requires only a small capacitor
• Data store to quantum trap nonvolatile elements via software, device pin, or automatic store (AutoStore) on power-down
• Data restore from nonvolatile elements to SRAM via software or power-up
• Unlimited read, write, and restore cycles
• Quantum trap store endurance up to 200,000 cycles
• Data retention of 20 years
• Single 3V supply with voltage range of +20% to -10%
• Commercial and industrial temperature ranges
• 48-ball FBGA and 44/54-pin TSOP II packages
• Lead-free and RoHS compliant