Infineon/CYPRESS S25FS256SDSMFI000
| Produttore | |
| Cod. Prod. | S25FS256SDSMFI000 |
| Cod. LCSC | C2944586 |
| Imballo | SOIC-16-300mil |
| Numero Cliente | |
| Attr. chiave | 256Mbit 1.7V~2V 133MHz SPI SOIC-16-300mil Memory RoHS |
| Scheda Tecnica | Infineon/CYPRESS S25FS256SDSMFI000 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
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Descrizione
Traduzione AI
The Cypress S25FS-S family devices are flash non-volatile memory products using:
- MirrorBit technology - that stores two data bits in each memory array transistor
- Eclipse architecture - that dramatically improves program and erase performance
- 65 nm process lithography
The S25FS-S family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional 2-bit
Caratteristiche
Traduzione AI
- Density – S25FS128S-128 Mbits (16 Mbytes) – S25FS256S-256 Mbits (32 Mbytes)
- Serial Peripheral Interface (SPI) – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command subset and footprint compatible with S25FL-A, S25FL-K, S25FL-P, and S25FL-S SPI families – Multi I/O Command subset and footprint compatible with S25FL-P, and S25FL-S SPI families
- Read – Commands: Normal, Fast, Dual I/O, Quad I/O, DDR Quad I/O – Modes: Burst Wrap, Continuous (XIP), QPI – Serial Flash Discoverable Parameters (SFDP) and Common Flash Interface (CFI), for configuration information
- Program – 256- or 512-byte Page Programming buffer – Program suspend and resume – Automatic ECC – internal hardware Error Correction Code generation with single-bit error correction
- Erase – Hybrid sector option – Physical set of eight 4-kbyte sectors and one 32-kbyte sector at the top or bottom of address space with all remaining sectors of 64 kbytes – Uniform sector option – Uniform 64-kbyte or 256-kbyte blocks for software compatibility with higher density and future devices – Erase suspend and resume – Erase status evaluation – 100,000 Program-Erase Cycles, minimum – 20 Year Data Retention, minimum
- Security Features – One-Time Program (OTP) array of 1024 bytes – Block Protection: – Status Register bits to control protection against program or erase of a contiguous range of sectors – Hardware and software control options – Advanced Sector Protection (ASP) – Individual sector protection controlled by boot code or password – Option for password control of read access
- Technology – Cypress 65 nm MirrorBit Technology with Eclipse Architecture
- Supply Voltage – 1.7V to 2.0V
- Temperature Range / Grade – Industrial -40℃ to +85℃ – Industrial Plus -40℃ to +105℃ – Automotive AEC-Q100 Grade 3 -40℃ to +85℃ – Automotive AEC-Q100 Grade 2 -40℃ to +105℃ – Automotive AEC-Q100 Grade 1 -40℃ to +125℃
- Packages (All Pb-Free) – 8-lead SOIC 208 mil (SOC008) — FS128S only – WSON 6x5 mm (WND008) — FS128S only – WSON 6x8 mm (WNH008) – 16-lead SOIC 300 mil (SO3016 — FS256S only) – BGA-24 6x8 mm – - 5x5 ball (FAB024) footprint -4x6 ball (FAC024) footprint – Known Good Die, and Known Tested Die
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.3948 | $ 0.39 |
| 200+ | $ 0.1528 | $ 30.56 |
| 500+ | $ 0.1475 | $ 73.75 |
| 1,000+ | $ 0.1448 | $ 144.80 |
Package Standard2400/Full Tray | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The Cypress S25FS-S family devices are flash non-volatile memory products using:
- MirrorBit technology - that stores two data bits in each memory array transistor
- Eclipse architecture - that dramatically improves program and erase performance
- 65 nm process lithography
The S25FS-S family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional 2-bit
Caratteristiche
Traduzione AI
- Density – S25FS128S-128 Mbits (16 Mbytes) – S25FS256S-256 Mbits (32 Mbytes)
- Serial Peripheral Interface (SPI) – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command subset and footprint compatible with S25FL-A, S25FL-K, S25FL-P, and S25FL-S SPI families – Multi I/O Command subset and footprint compatible with S25FL-P, and S25FL-S SPI families
- Read – Commands: Normal, Fast, Dual I/O, Quad I/O, DDR Quad I/O – Modes: Burst Wrap, Continuous (XIP), QPI – Serial Flash Discoverable Parameters (SFDP) and Common Flash Interface (CFI), for configuration information
- Program – 256- or 512-byte Page Programming buffer – Program suspend and resume – Automatic ECC – internal hardware Error Correction Code generation with single-bit error correction
- Erase – Hybrid sector option – Physical set of eight 4-kbyte sectors and one 32-kbyte sector at the top or bottom of address space with all remaining sectors of 64 kbytes – Uniform sector option – Uniform 64-kbyte or 256-kbyte blocks for software compatibility with higher density and future devices – Erase suspend and resume – Erase status evaluation – 100,000 Program-Erase Cycles, minimum – 20 Year Data Retention, minimum
- Security Features – One-Time Program (OTP) array of 1024 bytes – Block Protection: – Status Register bits to control protection against program or erase of a contiguous range of sectors – Hardware and software control options – Advanced Sector Protection (ASP) – Individual sector protection controlled by boot code or password – Option for password control of read access
- Technology – Cypress 65 nm MirrorBit Technology with Eclipse Architecture
- Supply Voltage – 1.7V to 2.0V
- Temperature Range / Grade – Industrial -40℃ to +85℃ – Industrial Plus -40℃ to +105℃ – Automotive AEC-Q100 Grade 3 -40℃ to +85℃ – Automotive AEC-Q100 Grade 2 -40℃ to +105℃ – Automotive AEC-Q100 Grade 1 -40℃ to +125℃
- Packages (All Pb-Free) – 8-lead SOIC 208 mil (SOC008) — FS128S only – WSON 6x5 mm (WND008) — FS128S only – WSON 6x8 mm (WNH008) – 16-lead SOIC 300 mil (SO3016 — FS256S only) – BGA-24 6x8 mm – - 5x5 ball (FAB024) footprint -4x6 ball (FAC024) footprint – Known Good Die, and Known Tested Die
C2944586 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MT25QU256ABA8ESF-0SIT | micron | SOP-16-300mil | 177 | $ 23.9266 | ||
| W25Q256JWFIQ | Winbond | SOIC-16-300mil | 155 | $ 9.3118 | ||
| GD25LT256EFIR | GigaDevice Semicon Beijing | SOP-16-300mil | 0 | $ 5.1899 | ||
| S25FS256SDSMFI001 | Infineon/CYPRESS | SOIC-16-300mil | 0 | $ 0.3838 | ||
| MX25U25645GMI00 | MXIC | SOIC-16-300mil | 0 | $ 5.3074 | ||
| W25Q256JWFIM | Winbond | SOIC-16-300mil | 0 | $ 3.7827 | ||
| IS25WE256E-RMLE-TY | ISSI | SOIC-16-300mil | 0 | $ 8.4985 | ||
| IS25WP256E-RMLE-TR | ISSI | SOIC-16-300mil | 0 | $ 6.854 | ||
| IS25WP256D-RMLE-TY | VISHAY | SOIC-16-300mil | 0 | $ 8.9817 | ||
| MX25U25635FMI-10G | MXIC | SOP-16-300mil | 0 | $ 3.1932 |

