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HUAYI HYG101N10LA1D
| Producent | HUAYIAsian Brands |
| Nr części prod. | HYG101N10LA1D |
| Nr LCSC | C2840473 |
| Opak. | TO-252-2L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 100V 15A TO-252-2L |
| Karta Katalogowa | HUAYI HYG101N10LA1D |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 7 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 62pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 51.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.072nF | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 62pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 51.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.072nF | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
- Trench power medium-voltage MOSFET technology
- Low R<sub>DS(on)</sub>
- Low gate charge
- Optimized for fast-switching applications
Funkcje
Tłumaczenie AI
- 100V/15A
- RDS(ON)=80mΩ (typ.) VGS=10V
- RDS(ON)=125mΩ (typ.) VGS=4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free and Green Devices Available (RoHS Compliant)
Zastosowania
Tłumaczenie AI
- Power Switching application
- Hard switched and high frequency circuits
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.1445 | $ 0.14 |
| 10+ | $ 0.1151 | $ 1.15 |
| 30+ | $ 0.1004 | $ 3.01 |
| 100+ | $ 0.0894 | $ 8.94 |
| 500+ | $ 0.0806 | $ 40.30 |
| 1,000+ | $ 0.0762 | $ 76.20 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 62pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 51.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.072nF | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 62pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 51.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.072nF | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
- Trench power medium-voltage MOSFET technology
- Low R<sub>DS(on)</sub>
- Low gate charge
- Optimized for fast-switching applications
Funkcje
Tłumaczenie AI
- 100V/15A
- RDS(ON)=80mΩ (typ.) VGS=10V
- RDS(ON)=125mΩ (typ.) VGS=4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free and Green Devices Available (RoHS Compliant)
Zastosowania
Tłumaczenie AI
- Power Switching application
- Hard switched and high frequency circuits
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HY1210D | HUAYI | TO-252-2L | 3,990 | $ 0.3014 | ||
| HYG180N10LS1D | HUAYI | TO-252-2L | 2,440 | $ 0.3503 | ||
| HYG053N10NS1D | HUAYI | TO-252-2L | 1,975 | $0.5070 $0.5633 | ||
| HY3010D | HUAYI | TO-252-2L | 808 | $ 0.6204 | ||
| HYG080N10LS1D | HUAYI | TO-252-2L | 0 | $ 0.3284 | ||
| HY1515D | HUAYI | TO-252-2L | 0 | $ 0.8319 | ||
| HYG400N15NS1D | HUAYI | TO-252-2 | 0 | $ 0.6743 |