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Wuxi China Resources Huajing Microelectronics CS4N65A3HD1-G
| Hersteller | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| Herst.-Teilenr. | CS4N65A3HD1-G |
| LCSC-Nr. | C2833631 |
| Verp. | TO-251 |
| Kundennummer | |
| Hauptmerkm. | N-Channel, Current: 4A, Voltage: 650V |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS4N65A3HD1-G |
| Alternative Teile | 7 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
CS4N65 A3HD1-G is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-251 package, RoHS compliant.
Merkmale
KI-Übersetzung
- Fast switching
- Enhanced ESD capability
- Low gate charge (typical: 14.5nC)
- Low reverse transfer capacitance (typical: 8.5pF)
- 100% single-pulse avalanche energy tested
Anwendungen
KI-Übersetzung
- Power switching circuits for adapters and chargers.
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.3538 | $ 0.35 |
| 10+ | $ 0.2965 | $ 2.97 |
| 30+ | $ 0.2719 | $ 8.16 |
| 75+ | $ 0.2345 | $ 17.59 |
| 525+ | $ 0.2208 | $ 115.92 |
| 975+ | $ 0.2126 | $ 207.29 |
Standardgehäuse75/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CS4N65 A3HD1-G is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-251 package, RoHS compliant.
Merkmale
KI-Übersetzung
- Fast switching
- Enhanced ESD capability
- Low gate charge (typical: 14.5nC)
- Low reverse transfer capacitance (typical: 8.5pF)
- 100% single-pulse avalanche energy tested
Anwendungen
KI-Übersetzung
- Power switching circuits for adapters and chargers.
C2833631 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CS4N60A3R | Wuxi China Resources Huajing Microelectronics | TO-251 | 2 | $ 0.2488 | ||
| CS4N80A3HD-G | Wuxi China Resources Huajing Microelectronics | TO-251 | 1 | $ 0.563 | ||
| CS4N65A3HD | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.4306 | ||
| CS4N65A3R | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.2776 | ||
| CS4N60A3HD | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.3203 | ||
| CS7N65A3R | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.5378 | ||
| CS6N60A3D | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.4454 |