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HUASHUO HSBB60P02
| Hersteller | HUASHUOAsian Brands |
| Herst.-Teilenr. | HSBB60P02 |
| LCSC-Nr. | C28314516 |
| Verp. | PRPAK3x3-8L |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 20V 60A PRPAK3x3-8L |
| Datenblatt | HUASHUO HSBB60P02 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 689pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 611pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.883nF | |
| Gate Charge(Qg) | 41nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 689pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 611pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.883nF | |
| Gate Charge(Qg) | 41nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
HSBB60P02 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSBB60P02 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Available in green/eco-friendly package
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Vorrätig: 1,675
1,675 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2492 | $ 1.25 |
| 50+ | $ 0.1957 | $ 9.79 |
| 150+ | $ 0.1727 | $ 25.91 |
| 500+ | $ 0.1441 | $ 72.05 |
| 2,500+ | $ 0.1314 | $ 328.50 |
| 5,000+ | $ 0.1237 | $ 618.50 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 689pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 611pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.883nF | |
| Gate Charge(Qg) | 41nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUASHUO | |
| Verp. | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 689pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 611pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.883nF | |
| Gate Charge(Qg) | 41nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
HSBB60P02 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSBB60P02 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Available in green/eco-friendly package
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C28314516 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| HSBB3115 | HUASHUO | PRPAK3x3-8L | 950 | $ 0.3273 |