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MXIC MX25L3235EMI-10G

Hersteller
Herst.-Teilenr.
MX25L3235EMI-10G
LCSC-Nr.
C2803008
Verp.
SOIC-16-300mil
Kundennummer
Hauptmerkm.
32Mbit 2.7V~3.6V 104MHz SPI SOIC-16-300mil Memory RoHS
DatenblattMXIC MX25L3235EMI-10G
Alternativteile6
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Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 1.6727$ 1.67
200+$ 0.648$ 129.60
500+$ 0.6248$ 312.40
1,000+$ 0.6139$ 613.90
Standardgehäuse44/Full Tube
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Memory/Memory
HerstellerMXIC
Verp.SOIC-16-300mil
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Hardware write protection;Software write protection;Absolute write protection
Memory Size32Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency104MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)3ms
Standby Supply Current15uA
InterfaceSPI

Merkmale

KI-Übersetzung
  • Supports Serial Peripheral Interface -- Mode 0 and Mode 3
  • 33,554,432 x 1 bit structure or 16,777,216 x 2 bits (two I/O mode) structure or 8,388,608 x 4 bits (four I/O mode) structure
  • 1024 Equal Sectors with 4K bytes each - Any Sector can be erased individually
  • 128 Equal Blocks with 32K bytes each - Any Block can be erased individually
  • 64 Equal Blocks with 64K bytes each - Any Block can be erased individually
  • Power Supply Operation - 2.7 to 3.6 V for read, erase, and program operations
  • Latch-up protected to 100 mA from -1V to Vcc + 1V
  • High Performance VCC = 2.7 ~ 3.6 V - Normal read - 50MHz - Fast read - 1 I/O: 104MHz with 8 dummy cycles - 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction - 4 I/O: Up to 104MHz - Configurable dummy cycle number for 4 I/O read operation - Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page) - Byte program time: 12μs (typical) - Continuous Program mode (automatically increase address under word program mode) - Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 10s(typ.) / chip
  • Low Power Consumption - Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz - Low active programming current: 15mA (typ.) - Low active sector erase current: 10mA (typ.) - Low standby current: 15μA (typ.) - Deep power down current: 1μA (typ.)
  • Typical 100,000 erase/program cycles
  • 20 years data retention
  • Input Data Format - 1-byte Command code
  • Advanced Security Features - BP0 - BP3 block group protect - Flexible individual block protect when OTP WPSEL = 1 - Additional 4K bits secured OTP for unique identifier
  • Auto Erase and Auto Program Algorithms - Automatically erases and verifies data at selected sector - Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse width (Any page to be programmed should have page in the erased state first.)
  • Status Register Feature
  • Electronic Identification - JEDEC 1-byte Manufacturer ID and 2-byte Device ID - RES command for 1-byte Device ID - The REMS, REMS2, REMS4 commands for 1-byte Manufacturer ID and 1-byte Device ID
  • Support Serial Flash Discoverable Parameters (SFDP) mode
  • SCLK Input - Serial clock input
  • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
  • SO/SIO1 - Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
  • WP#/SIO2 - Hardware write protection or serial data Input/Output for 4 x I/O mode
  • HOLD#/SIO3 - To pause the device

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