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EDA-ModelleEasyEDA
Slkor SL3406
| Hersteller | SlkorAsian Brands |
| Herst.-Teilenr. | SL3406 |
| LCSC-Nr. | C2760866 |
| Verp. | SOT-23-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 5.6A SOT-23-3 |
| Datenblatt | Slkor SL3406 |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-23-3 | |
| Output Capacitance(Coss) | 92pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.6A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 5.2nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-23-3 | |
| Output Capacitance(Coss) | 92pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 5.2nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
- Trench Power LV MOSFET technology
- High density cell design for low RDS(ON)
- High Speed switching
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Ultra-low gate charge
- Excellent dv/dt effect suppression
- 100% avalanche energy withstand (EAS) guaranteed
- RoHS-compliant green devices available
Anwendungen
KI-Übersetzung
- Battery protection
- Load switch
- Power management
Vorrätig: 1,550
1,550 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0528$ 0.0370 | $ 0.37 |
| 100+ | $ 0.0421$ 0.0295 | $ 2.95 |
| 300+ | $ 0.0367$ 0.0257 | $ 7.71 |
| 3,000+ | $ 0.0327$ 0.0229 | $ 68.70 |
| 6,000+ | $ 0.0294$ 0.0206 | $ 123.60 |
| 9,000+ | $ 0.0278$ 0.0195 | $ 175.50 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-23-3 | |
| Output Capacitance(Coss) | 92pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.6A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 5.2nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-23-3 | |
| Output Capacitance(Coss) | 92pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 5.2nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
- Trench Power LV MOSFET technology
- High density cell design for low RDS(ON)
- High Speed switching
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Ultra-low gate charge
- Excellent dv/dt effect suppression
- 100% avalanche energy withstand (EAS) guaranteed
- RoHS-compliant green devices available
Anwendungen
KI-Übersetzung
- Battery protection
- Load switch
- Power management
C2760866 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SL3400 | Slkor | SOT-23 | 1,500 | $ 0.0401 |