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STANSON Tech. ST18N10D
| Produttore | STANSON Tech.Asian Brands |
| Cod. Prod. | ST18N10D |
| Cod. LCSC | C2682823 |
| Imballo | TO-252-2 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 100V 18A TO-252-2 |
| Scheda Tecnica | STANSON Tech. ST18N10D |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | STANSON Tech. | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | STANSON Tech. | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Descrizione
ST18N10D is an N-channel logic-level enhancement-mode power MOSFET fabricated using high-cell-density DMOS trench technology. The ST18N10D is specifically designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Caratteristiche
- 100V/12.0A, RDS(ON) = 90 mΩ (typ.) @VGS = 10V
- 100V/8.0A, RDS(ON) = 100 mΩ @VGS = 4.0V
- Ultra-high density cell design for ultra-low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- TO-252 package
Applicazioni
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| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.2055 | $ 1.03 |
| 50+ | $ 0.1617 | $ 8.09 |
| 150+ | $ 0.1429 | $ 21.44 |
| 500+ | $ 0.1195 | $ 59.75 |
| 2,500+ | $ 0.1091 | $ 272.75 |
| 5,000+ | $ 0.1028 | $ 514.00 |
Package Standard2500/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | STANSON Tech. | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | STANSON Tech. | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Descrizione
ST18N10D is an N-channel logic-level enhancement-mode power MOSFET fabricated using high-cell-density DMOS trench technology. The ST18N10D is specifically designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Caratteristiche
- 100V/12.0A, RDS(ON) = 90 mΩ (typ.) @VGS = 10V
- 100V/8.0A, RDS(ON) = 100 mΩ @VGS = 4.0V
- Ultra-high density cell design for ultra-low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- TO-252 package
Applicazioni
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Could you please share the text you'd like me to translate?
C2682823 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| ST36N10D | STANSON Tech. | TO-252 | 4 | $ 0.3518 |