Winbond W29N01HVDINA
| Produttore | WinbondAsian Brands |
| Cod. Prod. | W29N01HVDINA |
| Cod. LCSC | C2641155 |
| Imballo | VFBGA-48(6.5x8) |
| Numero Cliente | |
| Attr. chiave | 1Gbit 2.7V~3.6V VFBGA-48(6.5x8) Memory RoHS |
| Scheda Tecnica | Winbond W29N01HVDINA |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Winbond | |
| Imballo | VFBGA-48(6.5x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Standby Supply Current | 10uA | |
| Interface | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Winbond | |
| Imballo | VFBGA-48(6.5x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Standby Supply Current | 10uA | |
| Interface | - |
Descrizione
The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA, 10uA for CMOS standby current. The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112 - bytes each. Each page consists of 2,048 - bytes for the main data storage area and 64 - bytes for the spare data area (The spare area is typically used for error management functions). The W29N01HV supports the standard NAND flash memory interface using the multiplexed 8 - bit bus to transfer data, addresses, and command instructions.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.4038 | $ 3.40 |
| 260+ | $ 1.3177 | $ 342.60 |
| 520+ | $ 1.2715 | $ 661.18 |
| 1,040+ | $ 1.2483 | $ 1298.23 |
Package Standard260/Full Tray | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Winbond | |
| Imballo | VFBGA-48(6.5x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Standby Supply Current | 10uA | |
| Interface | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Winbond | |
| Imballo | VFBGA-48(6.5x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Standby Supply Current | 10uA | |
| Interface | - |
Descrizione
The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA, 10uA for CMOS standby current. The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112 - bytes each. Each page consists of 2,048 - bytes for the main data storage area and 64 - bytes for the spare data area (The spare area is typically used for error management functions). The W29N01HV supports the standard NAND flash memory interface using the multiplexed 8 - bit bus to transfer data, addresses, and command instructions.
C2641155 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| W29N01HVDINA TR | Winbond | VFBGA-48(6.5x8) | 0 | $ 3.1616 |