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HXY MOSFET HVESD12C1-02V-G3-08
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | HVESD12C1-02V-G3-08 |
| Nr LCSC | C22440418 |
| Opak. | SOD-523 |
| Numer Klienta | |
| Klucz. cechy | ESD DIODE 12VWM 29VC SOD-523 |
| Karta Katalogowa | HXY MOSFET HVESD12C1-02V-G3-08 |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 29V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 6A | |
| Peak Pulse Power Dissipation (Ppp) | 174W@8/20us | |
| Voltage - Breakdown | - | |
| Number of Channels | 1 | |
| type | ESD | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 20nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 29V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 6A | |
| Peak Pulse Power Dissipation (Ppp) | 174W@8/20us |
| Typ | Opis | |
|---|---|---|
| Voltage - Breakdown | - | |
| Number of Channels | 1 | |
| type | ESD | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 20nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
Opis
HVESD12C1-02V-G3-08 is designed to protect sensitive semiconductor components from damage or malfunction caused by ESD and other transient voltage events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide robust protection for designs exposed to ESD environments. The device offers designers flexibility to protect a single unidirectional line in applications where an array is not required. Available in SOD-523 package.
Funkcje
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±30kV (contact discharge) and ±30kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 174W (8/20us)
- Working voltage: 5V
- Protects one Vcc or data line
- Low clamping voltage
- Low leakage current
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0728 | $ 0.73 |
| 100+ | $ 0.0575 | $ 5.75 |
| 300+ | $ 0.0499 | $ 14.97 |
| 3,000+ | $ 0.0442 | $ 132.60 |
| 6,000+ | $ 0.0396 | $ 237.60 |
| 9,000+ | $ 0.0373 | $ 335.70 |
Standardowa Obudowa3000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 29V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 6A | |
| Peak Pulse Power Dissipation (Ppp) | 174W@8/20us | |
| Voltage - Breakdown | - | |
| Number of Channels | 1 | |
| type | ESD | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 20nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 29V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 6A | |
| Peak Pulse Power Dissipation (Ppp) | 174W@8/20us |
| Typ | Opis | |
|---|---|---|
| Voltage - Breakdown | - | |
| Number of Channels | 1 | |
| type | ESD | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 20nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
Opis
HVESD12C1-02V-G3-08 is designed to protect sensitive semiconductor components from damage or malfunction caused by ESD and other transient voltage events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide robust protection for designs exposed to ESD environments. The device offers designers flexibility to protect a single unidirectional line in applications where an array is not required. Available in SOD-523 package.
Funkcje
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±30kV (contact discharge) and ±30kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 174W (8/20us)
- Working voltage: 5V
- Protects one Vcc or data line
- Low clamping voltage
- Low leakage current
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HUCLAMP1201H.TCT | HXY MOSFET | SOD-523 | 300 | $0.1438 $0.1513 | ||
| PESD12VS1UB | HXY MOSFET | SOD-523 | 2,900 | $0.0196 $0.0206 | ||
| ESD5Z12-HXY | HXY MOSFET | SOD-523 | 250 | $ 0.0212 | ||
| HAZ4012-01H | HXY MOSFET | SOD-523 | 0 | $ 0.0424 | ||
| HVESD12-02V-G-08 | HXY MOSFET | SOD-523 | 0 | $ 0.0459 | ||
| HAZ9412-01H | HXY MOSFET | SOD-523 | 0 | $ 0.0455 | ||
| HPJSD12TS-AU | HXY MOSFET | SOD-523 | 0 | $ 0.0531 | ||
| HCESD523NC12VU | HXY MOSFET | SOD-523 | 0 | $ 0.0524 | ||
| HVESD12C1-02VHG3-08 | HXY MOSFET | SOD-523 | 0 | $ 0.0764 | ||
| HCPDH12V0UB-HF | HXY MOSFET | SOD-523 | 0 | $ 0.0459 |