- 핀아웃
- 풋프린트
실제 제품과 다를 수 있음
EDA 모델EasyEDA
HXY MOSFET HESDALC5-1BT2Y
| 제조업체 | HXY MOSFETAsian Brands |
| 제조사 품번 | HESDALC5-1BT2Y |
| LCSC 번호 | C22439862 |
| 포장 | DFN1006-2L |
| 고객 번호 | |
| 주요 제원 | ESD DIODE 5VWM 20VC DFN1006-2L |
| 데이터시트 | HXY MOSFET HESDALC5-1BT2Y |
| 대체 부품 | 20 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN1006-2L | |
| Clamping Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us | |
| Voltage - Breakdown | 9V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN1006-2L | |
| Clamping Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us |
| 타입 | 설명 | |
|---|---|---|
| Voltage - Breakdown | 9V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
HESDALC5-1BT2Y protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Superior clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-exposed designs. It provides designers with the flexibility to protect a single bidirectional line in applications where arrays are not suitable. Package type: DFN1006-2L.
주요 특징
AI 번역
- Transient protection for high-speed data lines
- IEC 61000-4-2 (ESD): ±30kV (contact), ±30kV (air)
- IEC 61000-4-4 (EFT): 40A (5/50 ns)
- Peak power dissipation: 400W (8/20μs)
- Operating voltage: 5V
- Ultra-small package (1.0mm×0.6mm×0.5mm)
- Single I/O line protection
- Low clamping voltage
- Low leakage current
품절
재입고 알림
최소값: 5배수: 5판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 5+ | $ 0.1018 | $ 0.51 |
| 50+ | $ 0.0805 | $ 4.03 |
| 150+ | $ 0.0698 | $ 10.47 |
| 500+ | $ 0.0618 | $ 30.90 |
| 2,500+ | $ 0.0555 | $ 138.75 |
| 5,000+ | $ 0.0522 | $ 261.00 |
표준 패키지10000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN1006-2L | |
| Clamping Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us | |
| Voltage - Breakdown | 9V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN1006-2L | |
| Clamping Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us |
| 타입 | 설명 | |
|---|---|---|
| Voltage - Breakdown | 9V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
HESDALC5-1BT2Y protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Superior clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-exposed designs. It provides designers with the flexibility to protect a single bidirectional line in applications where arrays are not suitable. Package type: DFN1006-2L.
주요 특징
AI 번역
- Transient protection for high-speed data lines
- IEC 61000-4-2 (ESD): ±30kV (contact), ±30kV (air)
- IEC 61000-4-4 (EFT): 40A (5/50 ns)
- Peak power dissipation: 400W (8/20μs)
- Operating voltage: 5V
- Ultra-small package (1.0mm×0.6mm×0.5mm)
- Single I/O line protection
- Low clamping voltage
- Low leakage current
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| HAZ5825-01F | HXY MOSFET | DFN1006-2L | 820 | $0.0254 $0.0267 | ||
| HDESDALC5LP-7B | HXY MOSFET | DFN1006-2L | 550 | $ 0.0525 | ||
| HPJSD05CFN2 | HXY MOSFET | DFN1006-2L | 400 | $0.0329 $0.0365 | ||
| HUCLAMP0511P.TCT | HXY MOSFET | DFN1006-2L | 160 | $0.0619 $0.0651 | ||
| HPESDNC2FD5VBH | HXY MOSFET | DFN1006-2L | 40 | $0.0239 $0.0271 | ||
| HDESD5V0S1BL-7B | HXY MOSFET | DFN1006-2L | 20 | $0.0286 $0.0325 | ||
| HAZ9585-01F | HXY MOSFET | DFN1006-2L | 10 | $0.0433 $0.0481 | ||
| HCESD882NC5VB | HXY MOSFET | DFN1006-2L | 9,860 | $0.0244 $0.0256 | ||
| HESDM3051N2T5G | HXY MOSFET | DFN1006-2 | 200 | $0.0571 $0.0601 | ||
| HAZ5525-01F | HXY MOSFET | DFN1006-2L | 0 | $ 0.0356 | ||
| HESD0512LB | HXY MOSFET | DFN1006-2L | 0 | $ 0.0902 | ||
| HL13ESD5V0CE2 | HXY MOSFET | DFN1006-2L | 0 | $ 0.0587 | ||
| HESDALC5-1BM2 | HXY MOSFET | DFN1006-2L | 0 | $ 0.0637 | ||
| HUCLAMP0511P | HXY MOSFET | DFN1006-2L | 0 | $ 0.0691 | ||
| HUCLAMP0511P.TNT | HXY MOSFET | DFN1006-2L | 0 | $ 0.3351 | ||
| HD5V0L1B2LPSQ-7B | HXY MOSFET | DFN1006-2L | 0 | $ 0.0684 | ||
| HPESD5V0L1BSLAZ | HXY MOSFET | DFN1006-2L | 0 | $0.0263 $0.0276 | ||
| HSESD5V0V1BLA | HXY MOSFET | DFN1006-2L | 0 | $ 0.0728 | ||
| HVCUT0505B-HD1-GS08 | HXY MOSFET | DFN1006-2L | 0 | $ 0.0789 | ||
| HACPDQC5V0-HF | HXY MOSFET | DFN1006-2L | 0 | $ 0.0851 |