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HXY MOSFET HPESDNC23T24VB
| 제조업체 | HXY MOSFETAsian Brands |
| 제조사 품번 | HPESDNC23T24VB |
| LCSC 번호 | C22439725 |
| 포장 | SOT-23 |
| 고객 번호 | |
| 주요 제원 | ESD DIODE 24VWM 46VC SOT-23 |
| 데이터시트 | HXY MOSFET HPESDNC23T24VB |
| 대체 부품 | 9 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | SOT-23 | |
| Clamping Voltage | 46V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 350W@8/20us | |
| Voltage - Breakdown | 32V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 15nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 24V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | SOT-23 | |
| Clamping Voltage | 46V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 350W@8/20us |
| 타입 | 설명 | |
|---|---|---|
| Voltage - Breakdown | 32V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 15nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 24V |
개요
The HPESDNC23T24VB is designed to protect sensitive semiconductor components from damage or failure caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
주요 특징
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±8kV (contact discharge) and ±15kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 350W (8/20us)
- Working voltage: 24V
- Protects one bidirectional line or two unidirectional lines
- Low clamping voltage
- Low leakage current
| 수량 | 단가 | 총액 |
|---|---|---|
| 10+ | $ 0.0681$ 0.0600 | $ 0.60 |
| 100+ | $ 0.0549$ 0.0484 | $ 4.84 |
| 300+ | $ 0.0482$ 0.0425 | $ 12.75 |
| 3,000+ | $ 0.0433$ 0.0381 | $ 114.30 |
| 6,000+ | $ 0.0393$ 0.0346 | $ 207.60 |
| 9,000+ | $ 0.0373$ 0.0329 | $ 296.10 |
표준 패키지3000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | SOT-23 | |
| Clamping Voltage | 46V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 350W@8/20us | |
| Voltage - Breakdown | 32V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 15nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 24V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| 제조업체 | HXY MOSFET | |
| 포장 | SOT-23 | |
| Clamping Voltage | 46V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A | |
| Peak Pulse Power Dissipation (Ppp) | 350W@8/20us |
| 타입 | 설명 | |
|---|---|---|
| Voltage - Breakdown | 32V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 15nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 24V |
개요
The HPESDNC23T24VB is designed to protect sensitive semiconductor components from damage or failure caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
주요 특징
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±8kV (contact discharge) and ±15kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 350W (8/20us)
- Working voltage: 24V
- Protects one bidirectional line or two unidirectional lines
- Low clamping voltage
- Low leakage current
C22439725 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| HSZNUP2105LT1G | HXY MOSFET | SOT-23 | 410 | $0.0556 $0.0631 | ||
| HCEST23NC24VB | HXY MOSFET | SOT-23 | 160 | $0.0359 $0.0407 | ||
| HSM24B | HXY MOSFET | SOT-23 | 75 | $0.1028 $0.1082 | ||
| HDUP2105SOQ-7 | HXY MOSFET | SOT-23 | 40 | $0.1314 $0.1383 | ||
| HNUP2105L-AQ | HXY MOSFET | SOT-23 | 30 | $0.1092 $0.1149 | ||
| HSM24CANB-02HTG | HXY MOSFET | SOT-23 | 10 | $ 0.0564 | ||
| HNUP1105LT1G | HXY MOSFET | SOT-23 | 0 | $ 0.079 | ||
| HAQ24CANA-02HTG | HXY MOSFET | SOT-23 | 0 | $ 0.0859 | ||
| HSTS232240B151 | HXY MOSFET | SOT-23 | 0 | $ 0.1743 |