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HXY MOSFET HPESDNC5D5VB
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | HPESDNC5D5VB |
| Nr LCSC | C22439704 |
| Opak. | SOD-523 |
| Numer Klienta | |
| Klucz. cechy | ESD DIODE 5VWM 20VC SOD-523 |
| Karta Katalogowa | HXY MOSFET HPESDNC5D5VB |
| Części alternatywne | 8 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 20V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us | |
| Voltage - Breakdown | 7.8V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 20V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us |
| Typ | Opis | |
|---|---|---|
| Voltage - Breakdown | 7.8V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
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Opis
Tłumaczenie AI
HPESDNC5D5VB protects sensitive semiconductor components from damage or disruption caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD environments. It offers designers the flexibility to protect a single bidirectional line in applications where an array is not suitable. Available in SOD-523 package.
Funkcje
Tłumaczenie AI
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±30kV (contact discharge) and ±30kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 400W (8/20us)
- Operating voltage: 5V
- Protects one Vcc or data line
- Low clamping voltage
- Low leakage current
Na stanie: 300
300 W magazynie, wysyłka natychmiastowa
Minimum: 20Wielokrotność: 20Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 20+ | $ 0.0276$ 0.0243 | $ 0.49 |
| 200+ | $ 0.0219$ 0.0193 | $ 3.86 |
| 600+ | $ 0.0187$ 0.0165 | $ 9.90 |
| 3,000+ | $ 0.0168$ 0.0148 | $ 44.40 |
| 9,000+ | $ 0.0152$ 0.0134 | $ 120.60 |
| 21,000+ | $ 0.0143$ 0.0126 | $ 264.60 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 20V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us | |
| Voltage - Breakdown | 7.8V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | HXY MOSFET | |
| Opak. | SOD-523 | |
| Clamping Voltage | 20V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 20A | |
| Peak Pulse Power Dissipation (Ppp) | 400W@8/20us |
| Typ | Opis | |
|---|---|---|
| Voltage - Breakdown | 7.8V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
HPESDNC5D5VB protects sensitive semiconductor components from damage or disruption caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD environments. It offers designers the flexibility to protect a single bidirectional line in applications where an array is not suitable. Available in SOD-523 package.
Funkcje
Tłumaczenie AI
- Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±30kV (contact discharge) and ±30kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
- Peak power dissipation: 400W (8/20us)
- Operating voltage: 5V
- Protects one Vcc or data line
- Low clamping voltage
- Low leakage current
C22439704 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HESD5B5.0ST5G | HXY MOSFET | SOD-523 | 490 | $0.1076 $0.1132 | ||
| HDESD5V0S1BB-7 | HXY MOSFET | SOD-523 | 270 | $0.0521 $0.0548 | ||
| HAZ5925-01H | HXY MOSFET | SOD-523 | 0 | $ 0.0335 | ||
| HSTS521050B331 | HXY MOSFET | SOD-523 | 0 | $0.0745 $0.0784 | ||
| HESD5V0D5B-TP | HXY MOSFET | SOD-523 | 0 | $ 0.0374 | ||
| HCESDB5V0D5 | HXY MOSFET | SOD-523 | 0 | $ 0.0235 | ||
| HSZESD5B5.0ST5G | HXY MOSFET | SOD-523 | 0 | $ 0.1113 | ||
| HSZESD5B5.0ST1G | HXY MOSFET | SOD-523 | 0 | $ 0.1191 |