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HUASHUO HSS3N06
| Producent | HUASHUOAsian Brands |
| Nr części prod. | HSS3N06 |
| Nr LCSC | C22359216 |
| Opak. | SOT-23L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 3.2A SOT-23L |
| Karta Katalogowa | HUASHUO HSS3N06 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 4 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
HSS3N06 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS3N06 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Funkcje
Tłumaczenie AI
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Na stanie: 1,480
1,480 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0439 | $ 0.44 |
| 100+ | $ 0.0345 | $ 3.45 |
| 300+ | $ 0.0297 | $ 8.91 |
| 3,000+ | $ 0.0254 | $ 76.20 |
| 6,000+ | $ 0.0226 | $ 135.60 |
| 9,000+ | $ 0.0212 | $ 190.80 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUASHUO | |
| Opak. | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
HSS3N06 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS3N06 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Funkcje
Tłumaczenie AI
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C22359216 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |