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AOS AOZ5278QI

Hersteller
AOS
Herst.-Teilenr.
AOZ5278QI
LCSC-Nr.
C22256969
Verp.
-
Kundennummer
Hauptmerkm.
MOSFET Full, Half-Bridge (H Bridge) Drivers RoHS
DatenblattAOS AOZ5278QI
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 2.2805$ 2.28
200+$ 0.9103$ 182.06
500+$ 0.8804$ 440.20
1,000+$ 0.8647$ 864.70
Standardgehäuse3000/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Power Management (PMIC)/Full, Half-Bridge (H Bridge) Drivers
HerstellerAOS
Verp.-
Input Logic Level - High-
Input Logic Level - Low-
Propagation Delay tpHL-
Number of Drivers-
Quiescent Current(Iq)-
Load TypeMOSFET
Current - Output High(IOH)-
Rise Time-
Fall Time-
Propagation Delay tpLH-
Driven ConfigurationHigh Side;Low Side
Current - Output Low(IOL)-
Operating Temperature-40℃~+125℃
FeaturesEnable shutdown
Voltage - Supply-
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Beschreibung

KI-Übersetzung

AOZ5278QI is a general-purpose Smart Power Stage (SPS) consisting of two asymmetric MOSFETs and an integrated driver, designed for high-current, high-frequency DC-DC converters. The AOZ5278QI provides an output voltage signal (IMON) that represents real-time module current with a gain of 5mV/A. The IMON signal can directly replace inductor DCR sensing or resistor sensing in multiphase voltage regulator systems without requiring temperature compensation. The AOZ5278QI also includes a precision module temperature monitor (TMON). TMON is a voltage source signal with a gain of 8mV/°C. The MOSFETs are individually optimized for synchronous buck configuration. The high-side (HS) MOSFET is optimized for low capacitance and gate charge, enabling fast switching at low duty cycle operation. The low-side (LS) MOSFET features ultra-low on-resistance to minimize conduction losses. The standard 5mm×6mm QFN package is optimized to minimize parasitic inductance and reduce EMI.

Merkmale

KI-Übersetzung
  • 3V to 20V supply voltage range
  • 30V high-side MOSFET for enhanced system robustness
  • 55A continuous output current
  • 100A peak current at 10ms pulse
  • 150A peak current at 10μs pulse
  • Optimized for switching frequencies up to 1MHz
  • Integrated current monitor (5mV/A) with 5% accuracy across temperature
  • Integrated temperature monitor (8mV/°C) with 2% accuracy
  • Fault indicator
  • VCC undervoltage lockout (UVLO)
  • VIN undervoltage lockout (UVLO)
  • High-side MOSFET overcurrent and short-circuit protection
  • Zero current detection (ZCD)
  • Overtemperature protection (OTP)
  • Standard QFN5x6 - 39L package

Anwendungen

KI-Übersetzung
  • Server systems
  • High-end CPU/GPU power stages
  • Communication infrastructure