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Zdjęcia poglądowe
Modele EDAEasyEDA
ElecSuper 2SK3018-ES
| Producent | ElecSuperAsian Brands |
| Nr części prod. | 2SK3018-ES |
| Nr LCSC | C21713829 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 300mA SOT-23 |
| Karta Katalogowa | ElecSuper 2SK3018-ES |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.3pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.3pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2SK3018-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2SK3018-ES is lead-free.
Funkcje
Tłumaczenie AI
- 60V, RDS(ON) = 1.8 Ω (typical), @VGS = 10V
- RDS(ON) = 2.0 Ω (typical), @VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche-rated
- Low leakage current
- ESD protection - HBM: 2kV
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Na stanie: 2,850
2,850 W magazynie, wysyłka natychmiastowa
Minimum: 50Wielokrotność: 50Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 50+ | $ 0.019 | $ 0.95 |
| 500+ | $ 0.0145 | $ 7.25 |
| 3,000+ | $ 0.012 | $ 36.00 |
| 6,000+ | $ 0.0105 | $ 63.00 |
| 24,000+ | $ 0.0092 | $ 220.80 |
| 51,000+ | $ 0.0084 | $ 428.40 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.3pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.3pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2SK3018-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2SK3018-ES is lead-free.
Funkcje
Tłumaczenie AI
- 60V, RDS(ON) = 1.8 Ω (typical), @VGS = 10V
- RDS(ON) = 2.0 Ω (typical), @VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche-rated
- Low leakage current
- ESD protection - HBM: 2kV
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| BSS138P,215-ES | ElecSuper | SOT-23 | 11,950 | $ 0.0255 | ||
| BSS138LT1G-ES | ElecSuper | SOT-23 | 20,940 | $ 0.0157 | ||
| BSS138LT3G-ES | ElecSuper | SOT-23 | 8,850 | $ 0.0197 | ||
| 2N7002ET1G-ES | ElecSuper | SOT-23 | 27,830 | $ 0.0146 | ||
| 2N7002K-7-ES | ElecSuper | SOT-23 | 27,140 | $ 0.0126 | ||
| T2N7002AK-ES | ElecSuper | SOT-23 | 7,240 | $ 0.0102 | ||
| T2N7002BK,LM(ES) | ElecSuper | SOT-23 | 5,750 | $ 0.0185 | ||
| NX7002AK-ES | ElecSuper | SOT-23 | 4,190 | $ 0.0123 | ||
| NX7002BKR-ES | ElecSuper | SOT-23 | 2,200 | $ 0.0124 | ||
| BSS138KA | ElecSuper | SOT23-3L | 0 | $ 0.0476 |