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TI TRF37D73IDSGT

Producent
Nr części prod.
TRF37D73IDSGT
Nr LCSC
C2151497
Opak.
WSON-8-EP(2x2)
Numer Klienta
Klucz. cechy
1-6000MHz RF Gain Block
Karta KatalogowaTI TRF37D73IDSGT
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 2.5574$ 2.56
10+$ 2.1718$ 21.72
30+$ 1.9312$ 57.94
250+$ 1.6844$ 421.10
500+$ 1.5733$ 786.65
1,000+$ 1.524$ 1524.00
Standardowa Obudowa250/Full Reel
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaRF and Wireless/RF Amplifiers
ProducentTI
Opak.WSON-8-EP(2x2)
Input Return Loss20dB
Gain22dB
Operating Temperature-40℃~+85℃
Voltage - Supply3V~3.45V
Frequency Range6GHz
Noise Figure3.25dB
Output Return Loss12dB
FeaturesBias control circuit;Low-power mode
IP327.5dBm
P1dB16.5dBm
Current - Supply53mA

Opis

Tłumaczenie AI

The TRF37D73 comes in a 2.00mm×2.00mm ultra-thin small-outline no-lead (WSON) package with a power-saving pin, suitable for applications where space occupancy and low-power mode are critical. It is designed for ease of use, operating from a common 3.3V supply with a current consumption of 53mA. It uses an active bias circuit to provide a stable and predictable bias current over process, temperature, and voltage variations, offering a flat gain response and excellent OIP3 output up to 6000MHz. It is internally matched to 50Ω, simplifying usage and reducing the required printed circuit board (PCB) area. This device is a 3.3V general-purpose RF gain block and a SiGe Darlington amplifier with integrated 50Ω input and output matching. It includes an active bias circuit to maintain performance over a wide temperature and voltage range. The included power-down function allows the amplifier to be turned off when not needed to save power. Fast turn-off and turn-on enable the amplifier to be used in many time-division duplex applications. The TRF37D73 is a fixed-gain RF amplifier with internal input and output matching to 50Ω. It is a fully cascaded general-purpose amplifier. The active bias circuit ensures that the amplifier performance is optimized over the entire operating temperature and voltage range.

Funkcje

Tłumaczenie AI
  • 1MHz - 6000MHz
  • Gain: 19.5dB
  • Noise Figure: 3.25dB
  • Output P1dB: 16.5dBm at 2000MHz
  • Output IP3: 28dBm at 2000MHz
  • Power-saving mode
  • Single supply: 3.3V
  • Stable performance over temperature range
  • Unconditionally stable
  • Robust ESD protection: >1kV HBM; >1kV CDM

Zastosowania

Tłumaczenie AI
  • General-purpose RF gain block
  • Consumer products
  • Industrial utility metering
  • Low-cost radio products
  • Cellular base stations
  • Wireless infrastructure
  • RF backhaul
  • Radar
  • Electronic countermeasures
  • Software-defined radio
  • Test and measurement
  • Point-to-point/multipoint microwave
  • Software-defined radio
  • RF repeaters
  • Distributed antenna systems
  • LO and PA driver amplifiers
  • Wireless data, satellite, DBS, CATV
  • IF amplifiers