Slkor SL04P06
| Hersteller | SlkorAsian Brands |
| Herst.-Teilenr. | SL04P06 |
| LCSC-Nr. | C20539694 |
| Verp. | SOT-223 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 4A SOT-223 |
| Datenblatt | Slkor SL04P06 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 51pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 140mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 715pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 51pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 140mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 715pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Type | P-Channel |
Beschreibung
PTAC260302FC is a 30-watt LDMOS FET designed for multi-standard cellular power amplifier applications in the 2620 to 2690 MHz band. The device integrates a 10-watt (main) and a 20-watt (peaking) transistor, making it ideal for asymmetric Doherty amplifier designs. Key features include input matching, high gain, and a thermally enhanced package with an earless flange. The device is fabricated using Wolfspeed's advanced LDMOS process, delivering excellent thermal performance and outstanding reliability.
Merkmale
- High-density cell design for ultra-low on-resistance (Rdson)
- Fully characterized avalanche voltage and current ratings
- Excellent package thermal dissipation performance
Anwendungen
- PWM applications
- Power management
- Load switching
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.148$ 0.0888 | $ 0.44 |
| 50+ | $ 0.1223$ 0.0734 | $ 3.67 |
| 150+ | $ 0.1095$ 0.0657 | $ 9.86 |
| 500+ | $ 0.0999$ 0.0600 | $ 30.00 |
| 2,500+ | $ 0.0922$ 0.0554 | $ 138.50 |
| 5,000+ | $ 0.0883$ 0.0530 | $ 265.00 |
Standardgehäuse2500/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 51pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 140mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 715pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Slkor | |
| Verp. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 51pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 140mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 715pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Type | P-Channel |
Beschreibung
PTAC260302FC is a 30-watt LDMOS FET designed for multi-standard cellular power amplifier applications in the 2620 to 2690 MHz band. The device integrates a 10-watt (main) and a 20-watt (peaking) transistor, making it ideal for asymmetric Doherty amplifier designs. Key features include input matching, high gain, and a thermally enhanced package with an earless flange. The device is fabricated using Wolfspeed's advanced LDMOS process, delivering excellent thermal performance and outstanding reliability.
Merkmale
- High-density cell design for ultra-low on-resistance (Rdson)
- Fully characterized avalanche voltage and current ratings
- Excellent package thermal dissipation performance
Anwendungen
- PWM applications
- Power management
- Load switching
C20539694 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



