micron MT41K512M16TNA-125 IT:E
| Produttore | |
| Cod. Prod. | MT41K512M16TNA-125 IT:E |
| Cod. LCSC | C20528957 |
| Imballo | FBGA-96(10x14) |
| Numero Cliente | |
| Attr. chiave | 8Gbit 800MHz DDR3L SDRAM FBGA-96(10x14) Memory RoHS |
| Scheda Tecnica | micron MT41K512M16TNA-125 IT:E |
| Parti alternative | 11 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | FBGA-96(10x14) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | 50mA | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 89mA;1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | FBGA-96(10x14) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | 50mA | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 89mA;1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM |
Descrizione
8Gb (TwinDie™) 1.35V DDR3L SDRAM is a low-voltage version of the 1.5V DDR3 SDRAM device. It utilizes two Micron 4Gb DDR3L SDRAM x16 dies, essentially comprising two 4Gb DDR3L SDRAM memory arrays. Unless otherwise specified, DDR3L conforms to the functional and timing specifications listed in the equivalent-density DDR3 SDRAM datasheet. For specifications not included in this document, refer to the Micron 4Gb DDR3 SDRAM datasheet. Specifications for base part number MT41K256M16 (monolithic) are associated with manufactured part number MT41K512M16. TwinDie DDR3L SDRAM is a high-speed CMOS dynamic random access memory device, internally configured as two 8-bank DDR3L SDRAM devices. Although each die in the dual-die package is tested individually, some TwinDie test results may differ from those of equivalent dies tested in monolithic die packages. DDR3L SDRAM employs a double data rate architecture to achieve high-speed operation. Differential data strobe signals (DQS, DQS#) are transmitted externally along with data for data capture at the DDR3L SDRAM input receivers. Read and write accesses to DDR3L SDRAM are burst-oriented. This datasheet provides a general description, package dimensions, and package emergency solutions. For complete information on individual die initialization, register definitions, command descriptions, and die operations, refer to the Micron monolithic DDR3L datasheet. The industrial temperature (IT) option (if available) requires that case temperature not exceed -40°C or 95°C. When TC exceeds 85°C, JEDEC specifications require the refresh rate to be doubled; this also requires use of the high-temperature self-refresh option. Additionally, when TC < 0°C or > 95°C, ODT resistance, IDD values, some IDD specifications, and input/output impedance must be derated.
Caratteristiche
- Two 4Gb x16 Micron dies in a single package
- Two ranks (including dual CS#, ODT, CKE, and ZQ pins)
- VDD = VDDQ = 1.35V (1.283 - 1.425V); backward compatible with 1.5V operation
- 1.35V center-tapped push-pull I/O
- JEDEC standard emergency solution
- Thin package
- TC range: 0°C to 95°C
- 0°C to 85°C: 8192 refresh cycles within 64ms
- 85°C to 95°C: 8192 refresh cycles within 32ms
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 89.7813 | $ 89.78 |
| 200+ | $ 35.8233 | $ 7164.66 |
| 500+ | $ 34.6264 | $ 17313.20 |
| 1,000+ | $ 34.0356 | $ 34035.60 |
Package Standard1000/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | FBGA-96(10x14) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | 50mA | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 89mA;1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | FBGA-96(10x14) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | 50mA | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 89mA;1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM |
Descrizione
8Gb (TwinDie™) 1.35V DDR3L SDRAM is a low-voltage version of the 1.5V DDR3 SDRAM device. It utilizes two Micron 4Gb DDR3L SDRAM x16 dies, essentially comprising two 4Gb DDR3L SDRAM memory arrays. Unless otherwise specified, DDR3L conforms to the functional and timing specifications listed in the equivalent-density DDR3 SDRAM datasheet. For specifications not included in this document, refer to the Micron 4Gb DDR3 SDRAM datasheet. Specifications for base part number MT41K256M16 (monolithic) are associated with manufactured part number MT41K512M16. TwinDie DDR3L SDRAM is a high-speed CMOS dynamic random access memory device, internally configured as two 8-bank DDR3L SDRAM devices. Although each die in the dual-die package is tested individually, some TwinDie test results may differ from those of equivalent dies tested in monolithic die packages. DDR3L SDRAM employs a double data rate architecture to achieve high-speed operation. Differential data strobe signals (DQS, DQS#) are transmitted externally along with data for data capture at the DDR3L SDRAM input receivers. Read and write accesses to DDR3L SDRAM are burst-oriented. This datasheet provides a general description, package dimensions, and package emergency solutions. For complete information on individual die initialization, register definitions, command descriptions, and die operations, refer to the Micron monolithic DDR3L datasheet. The industrial temperature (IT) option (if available) requires that case temperature not exceed -40°C or 95°C. When TC exceeds 85°C, JEDEC specifications require the refresh rate to be doubled; this also requires use of the high-temperature self-refresh option. Additionally, when TC < 0°C or > 95°C, ODT resistance, IDD values, some IDD specifications, and input/output impedance must be derated.
Caratteristiche
- Two 4Gb x16 Micron dies in a single package
- Two ranks (including dual CS#, ODT, CKE, and ZQ pins)
- VDD = VDDQ = 1.35V (1.283 - 1.425V); backward compatible with 1.5V operation
- 1.35V center-tapped push-pull I/O
- JEDEC standard emergency solution
- Thin package
- TC range: 0°C to 95°C
- 0°C to 85°C: 8192 refresh cycles within 64ms
- 85°C to 95°C: 8192 refresh cycles within 32ms
C20528957 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MT41K512M16TNA-125 IT:E TR | micron | 96-FBGA (10x14) | 0 | $ 78.1883 | ||
| IS43TR16512BL-107MBLI | ISSI | TWBGA-96(10x14) | 0 | $ 19.0938 | ||
| MT41K512M16TNA-125:E | micron | 96-FBGA (10x14) | 0 | $ 31.0845 | ||
| MT41K512M16TNA-125:E TR | micron | 96-FBGA (10x14) | 0 | $ 59.8542 | ||
| IS46TR16512BL-125KBLA1-TR | ISSI | TWBGA-96(10x14) | 0 | $ 53.7376 | ||
| IS43TR16512AL-125KBLI | ISSI | LFBGA-96(10x14) | 0 | $ 70.3475 | ||
| IS43TR16512BL-107MBLI-TR | ISSI | TWBGA-96(10x14) | 0 | $ 50.0342 | ||
| IS46TR16512BL-107MBLA1 | ISSI | TWBGA-96(10x14) | 0 | $ 45.5384 | ||
| IS46TR16512BL-107MBLA1-TR | ISSI | TWBGA-96(10x14) | 0 | $ 56.4822 | ||
| MT41K512M16TNA-125 M:E | micron | 96-FBGA (10x14) | 0 | $ 85.5909 | ||
| IS43TR16512BL-107MBL-TR | ISSI | TWBGA-96(10x14) | 0 | $ 45.7749 |

