Immagini a scopo illustrativo
Modelli EDAEasyEDA
InterFET SMP4341
| Produttore | |
| Cod. Prod. | SMP4341 |
| Cod. LCSC | C20514589 |
| Imballo | SOT-23-3 |
| Numero Cliente | |
| Attr. chiave | 1 N-channel 350mW 9mA 800Ω 50V SOT-23-3 JFETs RoHS |
| Scheda Tecnica | InterFET SMP4341 |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | InterFET | |
| Imballo | SOT-23-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain Current (Idss) | 9mA | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 50V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V | |
| Output Capacitance(Coss) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | InterFET | |
| Imballo | SOT-23-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain Current (Idss) | 9mA |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 50V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V | |
| Output Capacitance(Coss) | - |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
-50V InterFET 2N4340 and 2N4341 are ultra-low leakage, medium-gain JFETs for sensitive amplifier stages in mid-frequency designs. Gate leakage is less than 1pA at room temperature. The proprietary InterFET process provides exceptional radiation hardness.
Caratteristiche
Traduzione AI
- InterFET N0016H geometry
- Low gate leakage: typical < 1pA at 40V
- Low input capacitance CISS: typical 3pF
- Typical noise: 3.5 nV/√Hz
- Typical transconductance: 2mS
- Typical pinch-off voltage: -2.5V
- High radiation hardness
- RoHS, REACH, CMR compliant
- Custom test and binning options available
- SMT, TH, and bare die package options available
- Corner case SPICE modeling: InterFET SPICE
Applicazioni
Traduzione AI
- Amplifier
- Switch
- Voltage Regulator
- Oscillator
- Signal Mixer
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 4.584 | $ 4.58 |
| 200+ | $ 1.8302 | $ 366.04 |
| 500+ | $ 1.7683 | $ 884.15 |
| 1,000+ | $ 1.7381 | $ 1738.10 |
Package Standard20/Full Bag | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | InterFET | |
| Imballo | SOT-23-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain Current (Idss) | 9mA | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 50V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V | |
| Output Capacitance(Coss) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/JFETs | |
| Produttore | InterFET | |
| Imballo | SOT-23-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain Current (Idss) | 9mA |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | 800Ω | |
| operating temperature | -55℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 50V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V | |
| Output Capacitance(Coss) | - |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
-50V InterFET 2N4340 and 2N4341 are ultra-low leakage, medium-gain JFETs for sensitive amplifier stages in mid-frequency designs. Gate leakage is less than 1pA at room temperature. The proprietary InterFET process provides exceptional radiation hardness.
Caratteristiche
Traduzione AI
- InterFET N0016H geometry
- Low gate leakage: typical < 1pA at 40V
- Low input capacitance CISS: typical 3pF
- Typical noise: 3.5 nV/√Hz
- Typical transconductance: 2mS
- Typical pinch-off voltage: -2.5V
- High radiation hardness
- RoHS, REACH, CMR compliant
- Custom test and binning options available
- SMT, TH, and bare die package options available
- Corner case SPICE modeling: InterFET SPICE
Applicazioni
Traduzione AI
- Amplifier
- Switch
- Voltage Regulator
- Oscillator
- Signal Mixer
C20514589 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |