ISSI IS61LV12824-10TQ-TR

The ISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE1, CE2 are HIGH and CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE1, CE2, CE2 and OE. The active LOW Write Enable (WE (overline)) controls both writing and reading of the memory. The IS61LV12824 is packaged in the JEDEC standard 119-pin PBGA and 100-pin TQFP.

• High-speed access time: 8, 10 ns
• CMOS low power operation
  • 756 mW (max.) operating @ 8 ns
  • 36 mW (max.) standby @ 8 ns
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages
• Industrial temperature available
• Lead-free available