micron MT53E1G16D1FW-046 AAT:A TR
| Produttore | |
| Cod. Prod. | MT53E1G16D1FW-046 AAT:A TR |
| Cod. LCSC | C20450075 |
| Imballo | 200-TFBGA (10x14.5) |
| Numero Cliente | |
| Attr. chiave | 16Gbit 2.133GHz LPDDR4X SDRAM 200-TFBGA (10x14.5) Memory |
| Scheda Tecnica | micron MT53E1G16D1FW-046 AAT:A TR |
| Parti alternative | 16 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA (10x14.5) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | |
| Refresh Current | 500uA | |
| Memory Size | 16Gbit | |
| Voltage - Supply | 1.06V~1.17V;20mA;10mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA (10x14.5) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | 500uA | |
| Memory Size | 16Gbit | |
| Voltage - Supply | 1.06V~1.17V;20mA;10mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
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Caratteristiche
Traduzione AI
- VDD1 = 1.70 - 1.95 V; nominal 1.80 V
- VDD2 = 1.06 - 1.17 V; nominal 1.10 V
- VDDQ = 1.06 - 1.17 V; nominal 1.10 V or low VDDQ = 0.57 - 0.65 V; nominal 0.60 V
- Ultra-low voltage core and I/O power supply
- Frequency range 2133–10 MHz (per-pin data rate range: 4266–20 Mb/s)
- 16n prefetch DDR architecture
- 8 internal banks per channel with concurrent operation support
- Single data rate CMD/ADR input
- Bidirectional/differential data strobe per byte lane
- Programmable read and write latency
- Programmable and dynamic burst length
- Per-bank targeted refresh for concurrent bank operation and command scheduling
- Up to 8.5 GB/s per die
- On-chip temperature sensor for self-refresh rate control
- Partial array self-refresh
- Selectable output drive strength
- Clock stop capability
- RoHS-compliant "green" package
- Programmable VSS termination
- Single-ended clock and data strobe support
- Improved tRFCab / tRFCpb = 280 ns / 140 ns
- AEC-Q100 compliant
- Array configurations
- 1 die per package
- 2 die per package
- 4 die per package
- 200-ball VFBGA package
- 200-ball TFBGA package
- 200-ball TFBGA package
- Speed grade, cycle time 468ps @ RL = 36/40 -046
- Special options
- Automotive grade
- Operating temperature range -40℃ to +95℃
- Operating temperature range -40℃ to +105℃
- Operating temperature range -40℃ to +125℃
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 49.1662 | $ 49.17 |
| 200+ | $ 19.6188 | $ 3923.76 |
| 500+ | $ 18.9627 | $ 9481.35 |
| 1,000+ | $ 18.6392 | $ 18639.20 |
Package Standard2000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA (10x14.5) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | |
| Refresh Current | 500uA | |
| Memory Size | 16Gbit | |
| Voltage - Supply | 1.06V~1.17V;20mA;10mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA (10x14.5) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | 500uA | |
| Memory Size | 16Gbit | |
| Voltage - Supply | 1.06V~1.17V;20mA;10mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- VDD1 = 1.70 - 1.95 V; nominal 1.80 V
- VDD2 = 1.06 - 1.17 V; nominal 1.10 V
- VDDQ = 1.06 - 1.17 V; nominal 1.10 V or low VDDQ = 0.57 - 0.65 V; nominal 0.60 V
- Ultra-low voltage core and I/O power supply
- Frequency range 2133–10 MHz (per-pin data rate range: 4266–20 Mb/s)
- 16n prefetch DDR architecture
- 8 internal banks per channel with concurrent operation support
- Single data rate CMD/ADR input
- Bidirectional/differential data strobe per byte lane
- Programmable read and write latency
- Programmable and dynamic burst length
- Per-bank targeted refresh for concurrent bank operation and command scheduling
- Up to 8.5 GB/s per die
- On-chip temperature sensor for self-refresh rate control
- Partial array self-refresh
- Selectable output drive strength
- Clock stop capability
- RoHS-compliant "green" package
- Programmable VSS termination
- Single-ended clock and data strobe support
- Improved tRFCab / tRFCpb = 280 ns / 140 ns
- AEC-Q100 compliant
- Array configurations
- 1 die per package
- 2 die per package
- 4 die per package
- 200-ball VFBGA package
- 200-ball TFBGA package
- 200-ball TFBGA package
- Speed grade, cycle time 468ps @ RL = 36/40 -046
- Special options
- Automotive grade
- Operating temperature range -40℃ to +95℃
- Operating temperature range -40℃ to +105℃
- Operating temperature range -40℃ to +125℃
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MT53E512M32D1ZW-046 AAT:B | micron | 200-TFBGA(10x14.5) | 10 | $ 146.0927 | ||
| MT53E512M32D1ZW-046BAAT:B | micron | TFBGA-200(10x14.5) | 0 | $ 45.7276 | ||
| MT53E512M32D1ZW-046BAAT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 44.7221 | ||
| MT53E1G16D1FW-046 AAT:A | micron | 200-TFBGA (10x14.5) | 0 | $ 50.2719 | ||
| MT53E512M32D1ZW-046 AAT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 39.0837 | ||
| MT53E512M32D1ZW-046BAIT:B | micron | TFBGA-200(10x14.5) | 0 | $ 37.977 | ||
| MT53E512M32D1ZW-046BAIT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 37.1416 | ||
| MT53E512M32D1ZW-046 AIT:B | micron | TFBGA-200(10x14.5) | 0 | $ 27.804 | ||
| MT53E1G16D1FW-046 AIT:A | micron | 200-TFBGA (10x14.5) | 0 | $ 46.3733 | ||
| MT53E1G16D1FW-046 AIT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 44.6522 | ||
| MT53E512M32D1ZW-046 AIT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 33.5012 | ||
| MT53E512M32D1ZW-046 AUT:B | micron | TFBGA-200(10x14.5) | 0 | $ 38.0122 | ||
| MT53E512M32D1ZW-046BAUT:B | micron | TFBGA-200(10x14.5) | 0 | $ 51.4748 | ||
| MT53E512M32D1ZW-046BAUT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 51.1696 | ||
| MT53E1G16D1FW-046 WT:A | micron | 200-TFBGA (10x14.5) | 0 | $ 33.1729 | ||
| MT53E1G16D1FW-046 WT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 34.4229 |

