VBsemi Elec SUB75N03-04-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | SUB75N03-04-VB |
| Nr LCSC | C20417481 |
| Opak. | TO-263(D2PAK) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 98A TO-263(D2PAK) |
| Karta Katalogowa | VBsemi Elec SUB75N03-04-VB |
| Części alternatywne | 20 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.065nF | |
| Gate Charge(Qg) | 257nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.065nF | |
| Gate Charge(Qg) | 257nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Zastosowania
Tłumaczenie AI
- OR Gate - Server - DC-DC Conversion
Na stanie: 20
20 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.778$ 0.6613 | $ 0.66 |
| 10+ | $ 0.6272$ 0.5332 | $ 5.33 |
| 50+ | $ 0.551$ 0.4684 | $ 23.42 |
| 100+ | $ 0.4764$ 0.4050 | $ 40.50 |
| 500+ | $ 0.4303$ 0.3658 | $ 182.90 |
| 1,000+ | $ 0.4081$ 0.3469 | $ 346.90 |
Standardowa Obudowa50/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.065nF | |
| Gate Charge(Qg) | 257nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12.065nF | |
| Gate Charge(Qg) | 257nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Zastosowania
Tłumaczenie AI
- OR Gate - Server - DC-DC Conversion
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IRL8113SPBF-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| STB80NE03L-06T4-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| PHB78NQ03LT-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| IRF3709ZS-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| SUM75N04-05L-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| CEB3070-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| PHB98N03LT-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| NTB85N03G-VB | VBsemi Elec | TO-263(D2PAK) | 8 | $0.6613 $0.778 | ||
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| IRF3707ZS-VB | VBsemi Elec | TO-263(D2PAK) | 0 | $0.6613 $0.778 | ||
| 2SK3467-ZK-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| FDB6676-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| FDB7030L-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| FDB7042L-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| FQB70N03-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| SPB73N03S2L-08-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| GFB70N03-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 | ||
| SPB80N03L-VB | VBsemi Elec | TO-263 | 0 | $ 1.0761 |



