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Modele EDAEasyEDA
EPC EPC2308ENGRT
| Producent | |
| Nr części prod. | EPC2308ENGRT |
| Nr LCSC | C20076502 |
| Opak. | QFN-7(3x5) |
| Numer Klienta | |
| Klucz. cechy | 150V 48A 2.5V 6mΩ@5V QFN-7(3x5) Single FETs, MOSFETs RoHS |
| Karta Katalogowa | EPC EPC2308ENGRT |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | EPC | |
| Opak. | QFN-7(3x5) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 48A | |
| Output Capacitance(Coss) | 592pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| RDS(on) | 6mΩ@5V | |
| Input Capacitance(Ciss) | 2.103nF | |
| Gate Charge(Qg) | 13.8nC@5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | EPC | |
| Opak. | QFN-7(3x5) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 48A |
| Typ | Opis | |
|---|---|---|
| Output Capacitance(Coss) | 592pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| RDS(on) | 6mΩ@5V | |
| Input Capacitance(Ciss) | 2.103nF | |
| Gate Charge(Qg) | 13.8nC@5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Gallium nitride features extremely high electron mobility and a low temperature coefficient, enabling ultra-low on-resistance RDS(on), while its lateral device structure and majority-carrier diode deliver ultra-low gate charge QG and zero reverse recovery charge QRR. The result is a device capable of handling both applications demanding very high switching frequencies and short on-times, as well as those dominated by conduction losses.
Funkcje
Tłumaczenie AI
- Easy-to-use and reliable gate drive — typical turn-on voltage 5 V, turn-off voltage 0 V (no negative voltage required)
- FET top electrically connected to source
- Higher efficiency — lower conduction and switching losses, zero reverse recovery loss
- Ultra-compact package — higher power density
- Thermally enhanced QFN package with top-side exposed die and ultra-low thermal resistance for low-temperature operation
- Solderable lead flanks with 0.6 mm pitch between HV and LV pads for easy assembly and inspection
Zastosowania
Tłumaczenie AI
- High-density DC-DC converters at 80–100 V
- AC/DC converters
- Synchronous rectification for 28–54 V chargers, adapters, and power supplies
- Solar optimizers and micro-inverters
- Motor drives and DC-DC converters for battery-powered power tools and robotics
- USB fast chargers
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 8.7636 | $ 8.76 |
| 200+ | $ 3.497 | $ 699.40 |
| 500+ | $ 3.38 | $ 1690.00 |
| 1,000+ | $ 3.3231 | $ 3323.10 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | EPC | |
| Opak. | QFN-7(3x5) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 48A | |
| Output Capacitance(Coss) | 592pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| RDS(on) | 6mΩ@5V | |
| Input Capacitance(Ciss) | 2.103nF | |
| Gate Charge(Qg) | 13.8nC@5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | EPC | |
| Opak. | QFN-7(3x5) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 48A |
| Typ | Opis | |
|---|---|---|
| Output Capacitance(Coss) | 592pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| RDS(on) | 6mΩ@5V | |
| Input Capacitance(Ciss) | 2.103nF | |
| Gate Charge(Qg) | 13.8nC@5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Gallium nitride features extremely high electron mobility and a low temperature coefficient, enabling ultra-low on-resistance RDS(on), while its lateral device structure and majority-carrier diode deliver ultra-low gate charge QG and zero reverse recovery charge QRR. The result is a device capable of handling both applications demanding very high switching frequencies and short on-times, as well as those dominated by conduction losses.
Funkcje
Tłumaczenie AI
- Easy-to-use and reliable gate drive — typical turn-on voltage 5 V, turn-off voltage 0 V (no negative voltage required)
- FET top electrically connected to source
- Higher efficiency — lower conduction and switching losses, zero reverse recovery loss
- Ultra-compact package — higher power density
- Thermally enhanced QFN package with top-side exposed die and ultra-low thermal resistance for low-temperature operation
- Solderable lead flanks with 0.6 mm pitch between HV and LV pads for easy assembly and inspection
Zastosowania
Tłumaczenie AI
- High-density DC-DC converters at 80–100 V
- AC/DC converters
- Synchronous rectification for 28–54 V chargers, adapters, and power supplies
- Solar optimizers and micro-inverters
- Motor drives and DC-DC converters for battery-powered power tools and robotics
- USB fast chargers
C20076502 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |