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Modelli EDAEasyEDA
onsemi FGY100T120RWD
| Produttore | |
| Cod. Prod. | FGY100T120RWD |
| Cod. LCSC | C20047183 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | N-Channel, Field Stop Vll (FS7) IGBT |
| Scheda Tecnica | onsemi FGY100T120RWD |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 1.071kW | |
| Td(off) | 364ns | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 44.2pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@100mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.75V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 256ns | |
| Switching Energy(Eoff) | 7.05mJ | |
| Turn-On Energy (Eon) | 8.13mJ | |
| Input Capacitance(Cies) | 12.2nF | |
| Output Capacitance(Coes) | 392pF | |
| Gate Charge(Qg) | 427nC@15V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 1.071kW | |
| Td(off) | 364ns | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 44.2pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@100mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.75V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 256ns | |
| Switching Energy(Eoff) | 7.05mJ | |
| Turn-On Energy (Eon) | 8.13mJ | |
| Input Capacitance(Cies) | 12.2nF | |
| Output Capacitance(Coes) | 392pF | |
| Gate Charge(Qg) | 427nC@15V |
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Descrizione
Traduzione AI
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.
Caratteristiche
Traduzione AI
- Low Conduction Loss and Optimized Switching
- Maximum Junction Temperature - TJ = 175℃
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- 100% of the Parts are Dynamically Tested
- Short Circuit Rated
- RoHS Compliant
Applicazioni
Traduzione AI
- Motor Control
- UPS
- General Application Requiring High Power Switch
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 16.0578 | $ 16.06 |
| 10+ | $ 15.4843 | $ 154.84 |
| 30+ | $ 14.4901 | $ 434.70 |
| 90+ | $ 13.6225 | $ 1226.03 |
Package Standard30/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 1.071kW | |
| Td(off) | 364ns | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 44.2pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@100mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.75V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 256ns | |
| Switching Energy(Eoff) | 7.05mJ | |
| Turn-On Energy (Eon) | 8.13mJ | |
| Input Capacitance(Cies) | 12.2nF | |
| Output Capacitance(Coes) | 392pF | |
| Gate Charge(Qg) | 427nC@15V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Pd - Power Dissipation | 1.071kW | |
| Td(off) | 364ns | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 44.2pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@100mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.75V@100A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 256ns | |
| Switching Energy(Eoff) | 7.05mJ | |
| Turn-On Energy (Eon) | 8.13mJ | |
| Input Capacitance(Cies) | 12.2nF | |
| Output Capacitance(Coes) | 392pF | |
| Gate Charge(Qg) | 427nC@15V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.
Caratteristiche
Traduzione AI
- Low Conduction Loss and Optimized Switching
- Maximum Junction Temperature - TJ = 175℃
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- 100% of the Parts are Dynamically Tested
- Short Circuit Rated
- RoHS Compliant
Applicazioni
Traduzione AI
- Motor Control
- UPS
- General Application Requiring High Power Switch
C20047183 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| FGY140T120SWD | onsemi | TO-247-3LD | 3 | $ 22.8585 | ||
| IKQ140N120CH7XKSA1-HXY | HXY MOSFET | TO-247P | 39 | $ 12.1924 | ||
| IXYX120N120C3-HXY | HXY MOSFET | TO-247P | 18 | $24.9871 $29.3965 | ||
| IXYH85N120A4 | Littelfuse/IXYS | TO-247 | 10 | $ 13.3462 | ||
| FGY100T120SWD | onsemi | TO-247-3LD | 26 | $ 5.2591 | ||
| IXYX110N120B4 | Littelfuse/IXYS | TO-247-3 | 3 | $ 29.8826 | ||
| IXYX120N120C3 | Littelfuse/IXYS | TO-247-3 | 58 | $ 44.043 | ||
| IXYX100N120B3 | Littelfuse/IXYS | TO-247-3 | 0 | $ 33.3194 | ||
| IXYX140N120A4 | Littelfuse/IXYS | TO-247-3 | 0 | $ 73.6732 | ||
| IXYX120N120B3 | Littelfuse/IXYS | TO-247-3 | 0 | $ 59.1044 |