VISHAY SMBG12AHE3/5B
| Produttore | |
| Cod. Prod. | SMBG12AHE3/5B |
| Cod. LCSC | C1981735 |
| Imballo | DO-215AA(SMBG) |
| Numero Cliente | |
| Attr. chiave | 19.9VC Clamp 30.2A@10/1000us Ipp TVS DIODE DO-215AA(SMBG) |
| Scheda Tecnica | VISHAY SMBG12AHE3/5B |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 15 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-215AA(SMBG) | |
| Clamping Voltage | 19.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 30.2A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 14.7V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 5uA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-215AA(SMBG) | |
| Clamping Voltage | 19.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 30.2A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us |
| Tipo | Descrizione | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 14.7V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 5uA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
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Caratteristiche
Traduzione AI
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional RoHS
- 600 W peak pulse power capability with a COMPLIANT 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.3847 | $ 0.38 |
| 200+ | $ 0.1489 | $ 29.78 |
| 500+ | $ 0.1437 | $ 71.85 |
| 1,000+ | $ 0.1411 | $ 141.10 |
Package Standard3200/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-215AA(SMBG) | |
| Clamping Voltage | 19.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 30.2A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 14.7V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 5uA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | VISHAY | |
| Imballo | DO-215AA(SMBG) | |
| Clamping Voltage | 19.9V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 30.2A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us |
| Tipo | Descrizione | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 14.7V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 5uA | |
| Reverse Stand-Off Voltage (Vrwm) | 12V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional RoHS
- 600 W peak pulse power capability with a COMPLIANT 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
C1981735 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SMBG12A-E3/52 | VISHAY | DO-215AA(SMBG) | 0 | $ 0.2273 | ||
| SMBG12A-E3/5B | VISHAY | DO-215AA(SMBG) | 0 | $ 0.2349 | ||
| SMBG12AHE3/52 | VISHAY | DO-215AA(SMBG) | 0 | $ 0.3847 | ||
| CJSMBJ12A | JSCJ | SMBG | 0 | $ 0.0579 | ||
| SMBG12A-M3/5B | VISHAY | DO-215AA(SMBG) | 0 | $ 0.2914 | ||
| MSMBG12CAE3 | MICROCHIP | DO-215AA(SMBG) | 0 | $ 1.5708 | ||
| MXLSMBG12AE3 | MICROCHIP | DO-215AA(SMBG) | 0 | $ 12.9564 | ||
| MSMBG12A | MICROCHIP | DO-215AA(SMBG) | 0 | $ 1.4582 | ||
| MSMBG12AE3 | MICROCHIP | DO-215AA(SMBG) | 0 | $ 1.4582 | ||
| MXSMBG12A | MICROCHIP | DO-215AA(SMBG) | 0 | $ 29.4029 | ||
| MXSMBG12AE3 | MICROCHIP | DO-215AA(SMBG) | 0 | $ 29.4029 | ||
| SMBG12A-M3/52 | VISHAY | DO-215AA(SMBG) | 0 | $ 0.2798 | ||
| MXLSMBG12A | MICROCHIP | DO-215AA(SMBG) | 0 | $ 12.9564 | ||
| MASMBG12A | MICROCHIP | DO-215AA(SMBG) | 0 | $ 7.1533 | ||
| MASMBG12AE3 | MICROCHIP | DO-215AA(SMBG) | 0 | $ 7.1533 |

