VBsemi Elec H5N2004DSTL-E-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | H5N2004DSTL-E-VB |
| LCSC-Nr. | C19626823 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 200V 10A TO-252 |
| Datenblatt | VBsemi Elec H5N2004DSTL-E-VB |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 175°C junction temperature
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant with directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Primary-side switch
Vorrätig: 50
50 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7002$ 0.5952 | $ 0.60 |
| 10+ | $ 0.57$ 0.4845 | $ 4.85 |
| 30+ | $ 0.5033$ 0.4279 | $ 12.84 |
| 100+ | $ 0.4383$ 0.3726 | $ 37.26 |
| 500+ | $ 0.4001$ 0.3401 | $ 170.05 |
| 1,000+ | $ 0.3795$ 0.3226 | $ 322.60 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 175°C junction temperature
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant with directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Primary-side switch
C19626823 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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