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Modelli EDAEasyEDA
micron MT28EW256ABA1HPC-1SIT
| Produttore | |
| Cod. Prod. | MT28EW256ABA1HPC-1SIT |
| Cod. LCSC | C19337310 |
| Imballo | LBGA-64(11x13) |
| Numero Cliente | |
| Attr. chiave | 256Mbit 2.7V~3.6V Parallel LBGA-64(11x13) Memory RoHS |
| Scheda Tecnica | micron MT28EW256ABA1HPC-1SIT |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | LBGA-64(11x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection;Software write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Interface | Parallel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | LBGA-64(11x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection;Software write protection | |
| Memory Size | 256Mbit |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Interface | Parallel |
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Caratteristiche
Traduzione AI
- Single-level cell (SLC) process technology
- Density: 256Mb
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65·VCC (I/O buffers)
- Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 70ns (VCC = VCCQ = 2.7–3.6V) – Random access: 75ns (VCCQ = 1.65-VCC)
- Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
- Word/Byte program: 25us per word (TYP)
- Block erase (128KB): 0.2s (TYP)
- Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus
- Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
- Unlock bypass, block erase, chip erase, and write to buffer capability
- BLANK CHECK operation to verify an erased block
- CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
- VPP/WP# protection – Protects first or last block regardless of block protection settings
- Software protection – Volatile protection – Nonvolatile protection – Password protection
- Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
- JESD47-compliant – 100,000 (minimum) ERASE cycles per block – Data retention: 20 years (TYP)
- Package – 56-pin TSOP, 14 x 20mm (JS) – 64-ball LBGA, 11 x 13mm (PC) – 56-ball VFBGA, 7x9mm (PN)
- RoHS-compliant, halogen-free packaging
- Operating temperature – Ambient: -40°C to +85°C
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 8.6282 | $ 8.63 |
| 200+ | $ 3.444 | $ 688.80 |
| 500+ | $ 3.3287 | $ 1664.35 |
| 1,104+ | $ 3.2711 | $ 3611.29 |
Package Standard1104/Full Bag | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | LBGA-64(11x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection;Software write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Interface | Parallel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | LBGA-64(11x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection;Software write protection | |
| Memory Size | 256Mbit |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Interface | Parallel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Single-level cell (SLC) process technology
- Density: 256Mb
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65·VCC (I/O buffers)
- Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 70ns (VCC = VCCQ = 2.7–3.6V) – Random access: 75ns (VCCQ = 1.65-VCC)
- Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
- Word/Byte program: 25us per word (TYP)
- Block erase (128KB): 0.2s (TYP)
- Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus
- Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
- Unlock bypass, block erase, chip erase, and write to buffer capability
- BLANK CHECK operation to verify an erased block
- CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
- VPP/WP# protection – Protects first or last block regardless of block protection settings
- Software protection – Volatile protection – Nonvolatile protection – Password protection
- Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
- JESD47-compliant – 100,000 (minimum) ERASE cycles per block – Data retention: 20 years (TYP)
- Package – 56-pin TSOP, 14 x 20mm (JS) – 64-ball LBGA, 11 x 13mm (PC) – 56-ball VFBGA, 7x9mm (PN)
- RoHS-compliant, halogen-free packaging
- Operating temperature – Ambient: -40°C to +85°C
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MT28EW256ABA1HPC-1SIT TR | micron | LBGA-64(11x13) | 0 | $ 7.7695 |