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JSMSEMI FDN358P-NL-JSM
| Produttore | JSMSEMIAsian Brands |
| Cod. Prod. | FDN358P-NL-JSM |
| Cod. LCSC | C18192168 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | 30V 4.3A 1.2V 1.5W 78mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | JSMSEMI FDN358P-NL-JSM |
| Conformità RoHS | 6 documenti disponibili |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
FDN358P-NL is a P-Channel Logic Enhancement Mode Power Field Effect Transistor fabricated using advanced trench technology with high cell density. This high-density process is specifically optimized to reduce on-resistance. These devices are particularly suited for low-voltage applications requiring low line power dissipation in ultra-small surface mount packages.
Caratteristiche
Traduzione AI
- -30V/-4.3A, RDS(ON) = 44mΩ (typ) at VGS = -10V
- -30V/-3.5A, RDS(ON) = 50mΩ (typ) at VGS = -4.5V
- -30V/-2.5A, RDS(ON) = 65mΩ (typ) at VGS = -2.5V
- Ultra-low RDS(ON) optimized design
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
Applicazioni
Traduzione AI
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Still Cameras (DSC) - LCD Display Inverters
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.1068 | $ 0.11 |
| 200+ | $ 0.0426 | $ 8.52 |
| 500+ | $ 0.0412 | $ 20.60 |
| 1,000+ | $ 0.0405 | $ 40.50 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
FDN358P-NL is a P-Channel Logic Enhancement Mode Power Field Effect Transistor fabricated using advanced trench technology with high cell density. This high-density process is specifically optimized to reduce on-resistance. These devices are particularly suited for low-voltage applications requiring low line power dissipation in ultra-small surface mount packages.
Caratteristiche
Traduzione AI
- -30V/-4.3A, RDS(ON) = 44mΩ (typ) at VGS = -10V
- -30V/-3.5A, RDS(ON) = 50mΩ (typ) at VGS = -4.5V
- -30V/-2.5A, RDS(ON) = 65mΩ (typ) at VGS = -2.5V
- Ultra-low RDS(ON) optimized design
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
Applicazioni
Traduzione AI
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Still Cameras (DSC) - LCD Display Inverters
C18192168 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
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