MICROCHIP UFR8510
| Producent | |
| Nr części prod. | UFR8510 |
| Nr LCSC | C17599724 |
| Opak. | DO-5 |
| Numer Klienta | |
| Klucz. cechy | 50ns 100V 975mV@85A 85A DO-5 Single Diodes |
| Karta Katalogowa | MICROCHIP UFR8510 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | DO-5 | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@85A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 85A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | DO-5 | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Opis | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@85A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 85A |
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Funkcje
Tłumaczenie AI
- Ultra-fast recovery rectifier
- Junction temperature 175℃
- Current rating 85A
- Repetitive peak reverse voltage 100 to 200V
- Maximum reverse recovery time 50ns
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 347.8231 | $ 347.82 |
| 200+ | $ 138.7833 | $ 27756.66 |
| 500+ | $ 134.1465 | $ 67073.25 |
| 1,000+ | $ 131.8553 | $ 131855.30 |
Standardowa Obudowa1/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | DO-5 | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@85A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 85A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | DO-5 | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Opis | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@85A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 85A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Ultra-fast recovery rectifier
- Junction temperature 175℃
- Current rating 85A
- Repetitive peak reverse voltage 100 to 200V
- Maximum reverse recovery time 50ns
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

