Everspin Tech MR1A16AMYS35
| Hersteller | |
| Herst.-Teilenr. | MR1A16AMYS35 |
| LCSC-Nr. | C17504197 |
| Verp. | TSOP-442 |
| Kundennummer | |
| Hauptmerkm. | 2Mbit Parallel Port (Parallel) TSOP-442 Memory RoHS |
| Datenblatt | Everspin Tech MR1A16AMYS35 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Everspin Tech | |
| Verp. | TSOP-442 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Power-up/power-down/under-voltage data protection function;Under-voltage lockout | |
| Memory Size | 2Mbit | |
| Interface | Parallel Port (Parallel) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Everspin Tech | |
| Verp. | TSOP-442 | |
| Operating Temperature | -40℃~+125℃ |
| Typ | Beschreibung | |
|---|---|---|
| Features | Power-up/power-down/under-voltage data protection function;Under-voltage lockout | |
| Memory Size | 2Mbit | |
| Interface | Parallel Port (Parallel) |
Beschreibung
The MR1A16A is a 2,097,152-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words × 16 bits. The MR1A16A offers SRAM-compatible 35 ns read/write timing with unlimited endurance. Data is always nonvolatile, with a retention period exceeding 20 years. A low-voltage inhibit circuit automatically protects data during power-down, preventing writes when voltage is out of specification.
The MR1A16A is an ideal memory solution for applications requiring permanent storage and fast retrieval of critical data and programs.
The MR1A16A is available in a compact 48-pin BGA package and a 44-pin TSOP Type 2 package. These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.
The MR1A16A provides highly reliable data storage across a wide temperature range. The product is offered in commercial (0 to +70 °C), industrial (−40 to +85 °C), extended (−40 to +105 °C), and AEC-Q100 Grade 1 (−40 to +125 °C) operating temperature range options.
Merkmale
- Fast 35 ns read/write cycle
- SRAM-compatible timing — use existing SRAM controllers without redesign
- Unlimited read/write endurance
- 20+ year nonvolatile data retention across temperature
- Single memory replaces Flash, SRAM, EEPROM, and BBSRAM in a system for simpler, more efficient design
- Replace battery-backed SRAM solutions with MRAM for improved reliability
- 3.3V supply
- Automatic data protection on power loss
- Commercial, industrial, and extended temperature ranges
- Optional AEC-Q100 Grade 1
- All products rated MSL-3 moisture sensitivity level
- RoHS-compliant SRAM TSOP2 and BGA packages
- 128K × 16 MRAM memory
- 44-pin TSOP2
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 24.5692 | $ 24.57 |
| 135+ | $ 9.8045 | $ 1323.61 |
| 540+ | $ 9.476 | $ 5117.04 |
| 945+ | $ 9.3141 | $ 8801.82 |
Standardgehäuse135/Full Tray | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Everspin Tech | |
| Verp. | TSOP-442 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Power-up/power-down/under-voltage data protection function;Under-voltage lockout | |
| Memory Size | 2Mbit | |
| Interface | Parallel Port (Parallel) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Everspin Tech | |
| Verp. | TSOP-442 | |
| Operating Temperature | -40℃~+125℃ |
| Typ | Beschreibung | |
|---|---|---|
| Features | Power-up/power-down/under-voltage data protection function;Under-voltage lockout | |
| Memory Size | 2Mbit | |
| Interface | Parallel Port (Parallel) |
Beschreibung
The MR1A16A is a 2,097,152-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words × 16 bits. The MR1A16A offers SRAM-compatible 35 ns read/write timing with unlimited endurance. Data is always nonvolatile, with a retention period exceeding 20 years. A low-voltage inhibit circuit automatically protects data during power-down, preventing writes when voltage is out of specification.
The MR1A16A is an ideal memory solution for applications requiring permanent storage and fast retrieval of critical data and programs.
The MR1A16A is available in a compact 48-pin BGA package and a 44-pin TSOP Type 2 package. These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.
The MR1A16A provides highly reliable data storage across a wide temperature range. The product is offered in commercial (0 to +70 °C), industrial (−40 to +85 °C), extended (−40 to +105 °C), and AEC-Q100 Grade 1 (−40 to +125 °C) operating temperature range options.
Merkmale
- Fast 35 ns read/write cycle
- SRAM-compatible timing — use existing SRAM controllers without redesign
- Unlimited read/write endurance
- 20+ year nonvolatile data retention across temperature
- Single memory replaces Flash, SRAM, EEPROM, and BBSRAM in a system for simpler, more efficient design
- Replace battery-backed SRAM solutions with MRAM for improved reliability
- 3.3V supply
- Automatic data protection on power loss
- Commercial, industrial, and extended temperature ranges
- Optional AEC-Q100 Grade 1
- All products rated MSL-3 moisture sensitivity level
- RoHS-compliant SRAM TSOP2 and BGA packages
- 128K × 16 MRAM memory
- 44-pin TSOP2
C17504197 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

