MICROCHIP APT43GA90B
| Hersteller | |
| Herst.-Teilenr. | APT43GA90B |
| LCSC-Nr. | C17443763 |
| Verp. | TO-247 |
| Kundennummer | |
| Hauptmerkm. | 337W 78A 900V PT (Punch-Through) TO-247 Single IGBTs RoHS |
| Datenblatt | MICROCHIP APT43GA90B |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-247 | |
| Pd - Power Dissipation | 337W | |
| Td(off) | 82ns | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 34pF | |
| IGBT Type | PT (Punch-Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,25A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V;2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 425uJ;1mJ | |
| Turn-On Energy (Eon) | 875uJ;1.66mJ | |
| Input Capacitance(Cies) | 2.465nF | |
| Output Capacitance(Coes) | 227pF | |
| Gate Charge(Qg) | 116nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-247 | |
| Pd - Power Dissipation | 337W | |
| Td(off) | 82ns | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 34pF | |
| IGBT Type | PT (Punch-Through) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,25A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V;2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 425uJ;1mJ | |
| Turn-On Energy (Eon) | 875uJ;1.66mJ | |
| Input Capacitance(Cies) | 2.465nF | |
| Output Capacitance(Coes) | 227pF | |
| Gate Charge(Qg) | 116nC |
Beschreibung
Power MOS 8 (circled) is a high-speed punch-through switch-mode IGBT. Low Eoff is achieved through advanced silicon design technology and lifetime control processes. Compared to other IGBT technologies, the improved Eoff - VCE(ON) trade-off delivers superior efficiency. Low gate charge and a significantly reduced Cres/Cies ratio provide excellent noise immunity, short delay times, and simplified gate drive. The intrinsic chip gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI even at high switching frequencies.
Merkmale
- Fast switching with low EMI
- Ultra-low Eoff for maximum efficiency
- Ultra-low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS compliant
Anwendungen
ZVS phase-shift and other full-bridge, half-bridge, high-power PFC boost, welding, UPS, solar, and other inverters
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 13.5594 | $ 13.56 |
| 200+ | $ 5.4105 | $ 1082.10 |
| 500+ | $ 5.2302 | $ 2615.10 |
| 1,000+ | $ 5.1408 | $ 5140.80 |
Standardgehäuse30/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-247 | |
| Pd - Power Dissipation | 337W | |
| Td(off) | 82ns | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 34pF | |
| IGBT Type | PT (Punch-Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,25A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V;2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 425uJ;1mJ | |
| Turn-On Energy (Eon) | 875uJ;1.66mJ | |
| Input Capacitance(Cies) | 2.465nF | |
| Output Capacitance(Coes) | 227pF | |
| Gate Charge(Qg) | 116nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-247 | |
| Pd - Power Dissipation | 337W | |
| Td(off) | 82ns | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 34pF | |
| IGBT Type | PT (Punch-Through) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,25A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V;2.2V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 425uJ;1mJ | |
| Turn-On Energy (Eon) | 875uJ;1.66mJ | |
| Input Capacitance(Cies) | 2.465nF | |
| Output Capacitance(Coes) | 227pF | |
| Gate Charge(Qg) | 116nC |
Beschreibung
Power MOS 8 (circled) is a high-speed punch-through switch-mode IGBT. Low Eoff is achieved through advanced silicon design technology and lifetime control processes. Compared to other IGBT technologies, the improved Eoff - VCE(ON) trade-off delivers superior efficiency. Low gate charge and a significantly reduced Cres/Cies ratio provide excellent noise immunity, short delay times, and simplified gate drive. The intrinsic chip gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI even at high switching frequencies.
Merkmale
- Fast switching with low EMI
- Ultra-low Eoff for maximum efficiency
- Ultra-low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS compliant
Anwendungen
ZVS phase-shift and other full-bridge, half-bridge, high-power PFC boost, welding, UPS, solar, and other inverters
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| APT43GA90BD30 | MICROCHIP | TO-247-3 | 6 | $ 13.3813 | ||
| APT80GA90B | MICROCHIP | TO-247 | 5 | $ 25.2954 | ||
| IXYH85N120A4 | Littelfuse/IXYS | TO-247 | 10 | $ 13.3462 | ||
| APT40GP90B2DQ2G | MICROCHIP | TO-247-3 | 0 | $ 57.0532 | ||
| APT40GP90BG | MICROCHIP | TO-247 | 0 | $ 34.062 | ||
| APT35GP120BG | MICROCHIP | TO-247 | 0 | $ 41.5354 | ||
| APT64GA90B | MICROCHIP | TO-247 | 0 | $ 22.9897 | ||
| APT35GP120B2DQ2G | MICROCHIP | TO-247-3 | 0 | $ 41.8681 | ||
| IXYH55N120A4 | Littelfuse/IXYS | TO-247 | 0 | $ 13.2719 | ||
| IXYH30N120A4 | Littelfuse/IXYS | TO-247(IXYH) | 0 | $ 9.944 |