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GeneSiC Semiconductor S12BR
| Hersteller | |
| Herst.-Teilenr. | S12BR |
| LCSC-Nr. | C17384175 |
| Verp. | DO-4 |
| Kundennummer | |
| Hauptmerkm. | 100V 1 Independent 1.1V@12A 12A DO-4 Single Diodes RoHS |
| Datenblatt | GeneSiC Semiconductor S12BR |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1.1V@12A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 280A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1.1V@12A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 280A |
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Beschreibung
KI-Übersetzung
Silicon standard recovery diode, repetitive peak reverse voltage VRRM 100V - 600V, forward current IF 12A.
Merkmale
KI-Übersetzung
- High surge capability
- VRRM range from 100V to 600V
- Insensitive to ESD
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 9.3425 | $ 9.34 |
| 250+ | $ 3.7277 | $ 931.93 |
| 500+ | $ 3.6035 | $ 1801.75 |
| 1,000+ | $ 3.5414 | $ 3541.40 |
Standardgehäuse250/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1.1V@12A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 280A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1.1V@12A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 280A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Silicon standard recovery diode, repetitive peak reverse voltage VRRM 100V - 600V, forward current IF 12A.
Merkmale
KI-Übersetzung
- High surge capability
- VRRM range from 100V to 600V
- Insensitive to ESD
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| S12B | GeneSiC Semiconductor | DO-4 | 0 | $ 3.9986 | ||
| S12DR | GeneSiC Semiconductor | DO-4 | 0 | $ 10.2555 | ||
| S12D | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12GR | GeneSiC Semiconductor | DO-4 | 0 | $ 10.2555 | ||
| S12G | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12J | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12JR | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12KR | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12K | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12M | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12MR | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12QR | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| S12Q | GeneSiC Semiconductor | DO-4 | 0 | $ 9.3425 | ||
| 16F10 | Solid State System | DO-4 | 0 | $ 4.4108 | ||
| 16FR10 | Solid State System | DO-4 | 0 | $ 4.4108 | ||
| 16FR20 | Solid State System | DO-4 | 0 | $ 5.0409 | ||
| 16FR40 | Solid State System | DO-4 | 0 | $ 4.4108 | ||
| 16F40 | Solid State System | DO-4 | 0 | $ 4.4108 | ||
| 16FR80 | Solid State System | DO-4 | 0 | $ 4.4108 | ||
| 16FR100 | Solid State System | DO-4 | 0 | $ 4.4108 |