ISSI IS43LR16128B-6BLI-TR

The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.

• JEDEC standard 1.8V power supply.
• VDD = 1.8V, VDDQ = 1.8V
• Four internal banks for concurrent operation
• MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (8K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 208MHZ
• Maximum data rate up to 416Mbps/pin
• Power Saving support - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength or 1/2, 1/4, or 1/8 of Full Strength
• LVCMOS compatible inputs/outputs
• Operation Temperature: - Commercial (TA = 0~70℃) - Industrial (TA = -40~85℃) - Automotive, A1 (TA = -40~85℃) - Automotive, A2 (TA = -40~105℃)