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Infineon IRLU3410PBF
| Produttore | |
| Cod. Prod. | IRLU3410PBF |
| Cod. LCSC | C152440 |
| Imballo | TO-251AA |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 100V 17A TO-251AA |
| Scheda Tecnica | Infineon IRLU3410PBF |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-251AA | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 155mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-251AA | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 155mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Descrizione
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Caratteristiche
- Logic level gate drive
- Ultra-low on-resistance
- Surface mount (IRLR3410)
- Straight lead (IRLU3410)
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Lead-free
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.731 | $ 0.73 |
| 10+ | $ 0.6015 | $ 6.02 |
| 30+ | $ 0.5359 | $ 16.08 |
| 75+ | $ 0.4556 | $ 34.17 |
| 525+ | $ 0.4163 | $ 218.56 |
| 975+ | $ 0.3966 | $ 386.69 |
Package Standard75/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-251AA | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 155mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-251AA | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 155mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Descrizione
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Caratteristiche
- Logic level gate drive
- Ultra-low on-resistance
- Surface mount (IRLR3410)
- Straight lead (IRLU3410)
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Lead-free
C152440 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| VBFB1208N | VBsemi Elec | TO-251 | 19 | $1.1121 $1.3083 | ||
| CMU25N20A | Cmos | TO-251 | 5 | $0.2896 $0.3048 | ||
| AOY66920 | AOS | TO-251B | 0 | $ 1.4596 | ||
| CMU6015 | Cmos | TO-251 | 0 | $0.2942 $0.3096 | ||
| NCE0125AI | NCE | TO-251 | 0 | $ 0.3522 | ||
| VBFB1102N | VBsemi Elec | TO-251 | 0 | $ 1.251 | ||
| CMU2922A | Cmos | TO-251 | 0 | $0.1571 $0.1653 | ||
| AOY66919 | AOS | TO-251B | 0 | $ 1.727 | ||
| AUIRFU540Z | Infineon | IPAK | 0 | $ 2.1949 | ||
| JCS3910V | Jilin Sino-Microelectronics | IPAK | 0 | $ 0.4227 |