FUJITSU MB85RS4MLYPF-G-BCERE1

The MB85RS4MLY is a FeRAM chip configured as 524,288 words × 8 bits, utilizing ferroelectric process and silicon-gate CMOS process technologies to form nonvolatile memory cells. This product is suitable for high-temperature environment applications. The MB85RS4MLY uses SPI. The MB85RS4MLY retains data without requiring a backup battery as needed in SRAM. The memory cells used in the MB85RS4MLY support 10^13 read/write cycles, a significant improvement over the number of read/write operations supported by Flash memory and E²PROM. Since the MB85RS4MLY requires no wait time during write operations, its write cycle time is significantly shorter than that of Flash memory or E²PROM.

• Bit configuration: 524,288 words × 8 bits
• Special sector area: 256 words × 8 bits — data retention guaranteed after three reflows under JEDEC MSL-3 standard conditions
• Unique ID
• Serial number: 64-bit — data retention guaranteed after three reflows under JEDEC MSL-3 standard conditions
• Serial peripheral interface: SPI, supporting SPI Mode 0 (0, 0) and Mode 3 (1, 1)
• Operating frequency: 50 MHz (max)
• High endurance: 10^13 cycles/byte
• Data retention: 50.4 years (+85°C); 13.7 years (+105°C); 4.2 years (+125°C) or longer, evaluated beyond 4.2 years at +125°C
• Operating supply voltage: 1.7 V to 1.95 V
• Low power consumption: operating supply current 3.5 mA (max at 50 MHz), standby current 340 μA (max)
• Operating temperature range: −40°C to +125°C
• Package: 8-pin plastic SOP 208mil; 8-pin plastic DFN 5mm×6mm
• RoHS compliant