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EDA-ModelleEasyEDA
HUAYI HY1908B
| Hersteller | HUAYIAsian Brands |
| Herst.-Teilenr. | HY1908B |
| LCSC-Nr. | C138336 |
| Verp. | TO-263-2L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 80V 90A TO-263-2L |
| Datenblatt | HUAYI HY1908B |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUAYI | |
| Verp. | TO-263-2L | |
| Output Capacitance(Coss) | 389pF | |
| Pd - Power Dissipation | 185W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.8nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUAYI | |
| Verp. | TO-263-2L | |
| Output Capacitance(Coss) | 389pF | |
| Pd - Power Dissipation | 185W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.8nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 80V/90A
- RDS(ON) = 7mΩ (typical) @ VGS = 10V
- 100% avalanche tested
- Robust and reliable
- Lead-free devices available (RoHS compliant)
Anwendungen
KI-Übersetzung
- Switching applications - Power management for inverter systems
Vorrätig: 4
4 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6488 | $ 0.65 |
| 10+ | $ 0.5326 | $ 5.33 |
| 50+ | $ 0.4738 | $ 23.69 |
| 100+ | $ 0.4149 | $ 41.49 |
| 500+ | $ 0.3802 | $ 190.10 |
| 800+ | $ 0.3621 | $ 289.68 |
| 1,600+ | $ 0.3591 | $ 574.56 |
| 4,000+ | $ 0.3561 | $ 1424.40 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUAYI | |
| Verp. | TO-263-2L | |
| Output Capacitance(Coss) | 389pF | |
| Pd - Power Dissipation | 185W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.8nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HUAYI | |
| Verp. | TO-263-2L | |
| Output Capacitance(Coss) | 389pF | |
| Pd - Power Dissipation | 185W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.8nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 80V/90A
- RDS(ON) = 7mΩ (typical) @ VGS = 10V
- 100% avalanche tested
- Robust and reliable
- Lead-free devices available (RoHS compliant)
Anwendungen
KI-Übersetzung
- Switching applications - Power management for inverter systems
C138336 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| HYG053N10NS1B | HUAYI | TO-263-2L | 4,615 | $0.5280 $0.5557 | ||
| HYG055N08NS1B | HUAYI | TO-263-2L | 24 | $ 0.5712 | ||
| HYG054N09NS1B | HUAYI | TO-263-2L | 18 | $ 0.6352 | ||
| HYG064N08NA1B | HUAYI | TO-263-2 | 15 | $ 0.7485 | ||
| HYG042N10NS1B | HUAYI | TO-263-2L | 765 | $ 1.0819 | ||
| HY3312B | HUAYI | TO-263-2L | 2 | $ 0.4602 | ||
| HYG065N15NS1B | HUAYI | TO-263-2L | 316 | $ 2.0149 | ||
| HY3008B | HUAYI | TO-263-2 | 0 | $ 0.7084 | ||
| HY3010B | HUAYI | TO-263-2 | 0 | $ 0.8927 | ||
| HYG050N08NS1B | HUAYI | TO-263-2 | 0 | $ 0.878 |