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Modelli EDAEasyEDA
onsemi H11F1M
| Produttore | |
| Cod. Prod. | H11F1M |
| Cod. LCSC | C899456 |
| Imballo | DIP-6 |
| Numero Cliente | |
| Attr. chiave | Photo FET Optocouplers |
| Scheda Tecnica | onsemi H11F1M |
| Conformità RoHS | 4 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | onsemi | |
| Imballo | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 30V | |
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | onsemi | |
| Imballo | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
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Descrizione
Traduzione AI
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Caratteristiche
Traduzione AI
- As a remote variable resistor: ≤ 100Ω to ≥ 300 MΩ
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance
- As an analog switch: Extremely low offset voltage
- 60 Vₚ₋ₚ signal capability
- No charge injection or latch-up
- UL recognized (File #E90700)
Applicazioni
Traduzione AI
- As a remote variable resistor: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching
- As an analog switch: Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion
Disponibile: 98
98 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 2.024 | $ 2.02 |
| 10+ | $ 1.6979 | $ 16.98 |
| 50+ | $ 1.4946 | $ 74.73 |
| 100+ | $ 1.2849 | $ 128.49 |
| 500+ | $ 1.1898 | $ 594.90 |
| 1,000+ | $ 1.1489 | $ 1148.90 |
Package Standard50/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | onsemi | |
| Imballo | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 30V | |
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | onsemi | |
| Imballo | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Caratteristiche
Traduzione AI
- As a remote variable resistor: ≤ 100Ω to ≥ 300 MΩ
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance
- As an analog switch: Extremely low offset voltage
- 60 Vₚ₋ₚ signal capability
- No charge injection or latch-up
- UL recognized (File #E90700)
Applicazioni
Traduzione AI
- As a remote variable resistor: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching
- As an analog switch: Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion
C899456 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |