- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FQAF13N80
| Hersteller | |
| Herst.-Teilenr. | FQAF13N80 |
| LCSC-Nr. | C898053 |
| Verp. | TO-3PF-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 800V 8A TO-3PF-3 |
| Datenblatt | onsemi FQAF13N80 |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-3PF-3 | |
| Output Capacitance(Coss) | 275pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-3PF-3 | |
| Output Capacitance(Coss) | 275pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Merkmale
KI-Übersetzung
- 8.0 A, 800 V, RDS(on) = 750 mΩ (max) @ VGS = 10 V, ID = 4.0 A
- Low gate charge (typical 68 nC)
- Low Crss (typical 30 pF)
- 100% avalanche tested
Anwendungen
KI-Übersetzung
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 7.9656 | $ 7.97 |
| 10+ | $ 7.1679 | $ 71.68 |
| 30+ | $ 6.6951 | $ 200.85 |
| 100+ | $ 6.2159 | $ 621.59 |
| 500+ | $ 5.9933 | $ 2996.65 |
| 1,000+ | $ 5.8942 | $ 5894.20 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-3PF-3 | |
| Output Capacitance(Coss) | 275pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-3PF-3 | |
| Output Capacitance(Coss) | 275pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Merkmale
KI-Übersetzung
- 8.0 A, 800 V, RDS(on) = 750 mΩ (max) @ VGS = 10 V, ID = 4.0 A
- Low gate charge (typical 68 nC)
- Low Crss (typical 30 pF)
- 100% avalanche tested
Anwendungen
KI-Übersetzung
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
C898053 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FQAF11N90 | onsemi | TO-3PF | 0 | $ 3.39 |