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Modele EDAEasyEDA
onsemi NSBC114EPDP6T5G
| Producent | |
| Nr części prod. | NSBC114EPDP6T5G |
| Nr LCSC | C896368 |
| Opak. | SOT-963-6 |
| Numer Klienta | |
| Klucz. cechy | 35 231mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-963-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Karta Katalogowa | onsemi NSBC114EPDP6T5G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Producent | onsemi | |
| Opak. | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 231mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Producent | onsemi | |
| Opak. | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Typ | Opis | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 231mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.0678 | $ 0.07 |
| 200+ | $ 0.0263 | $ 5.26 |
| 500+ | $ 0.0254 | $ 12.70 |
| 1,000+ | $ 0.0249 | $ 24.90 |
Standardowa Obudowa8000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Producent | onsemi | |
| Opak. | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 231mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Producent | onsemi | |
| Opak. | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Typ | Opis | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 231mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant
C896368 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |